scholarly journals Temperature-dependent carrier dynamics in self-assembled InGaAs quantum dots

2002 ◽  
Vol 80 (12) ◽  
pp. 2162-2164 ◽  
Author(s):  
J. Urayama ◽  
T. B. Norris ◽  
H. Jiang ◽  
J. Singh ◽  
P. Bhattacharya
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Temperature Dependent ◽  
Self Assembled

scholarly journals Spectroscopy and carrier dynamics in CdSe self-assembled quantum dots embedded in ZnxCdyMg1−x−ySe

2005 ◽  
Vol 86 (25) ◽  
pp. 253113 ◽  
Author(s):  
G. Comanescu ◽  
W. B. Wang ◽  
S. Gundry ◽  
B. Das ◽  
R. R. Alfano ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Self Assembled

scholarly journals Temperature dependence of ultrasharp luminescence lines in AlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots

1996 ◽  
Vol 74 (S1) ◽  
pp. 216-219 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
S. Charbonneau
Keyword(s):  
Quantum Dots ◽  
Ground State ◽  
State Transition ◽  
Thermionic Emission ◽  
Excitation Density ◽  
High Excitation ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Self Assembled ◽  
Intensity Evolution

Ensembles of~600 AlyIn1−yAs/AlxGa1−xAs self-assembled quantum dots (QDs) are investigated using photoluminescence (PL) and time-resolved PL in the visible. At very low excitation intensities, the PL spectrum shows multiple ultranarrow luminescence lines (FWHM ~200 μeV), which are attributed to the ground-state transition of a few dots (4 or less). The temperature and intensity evolution of these sharp lines is then monitored. The temperature-dependent measurements show that the line width and lifetime of the narrow lines remain constant up to the onset of thermionic, emission. Intensity-dependent measurements show that for high excitation density the collective background, emitted by the ensemble of QDs, is enhanced relative to the amplitude of individual ultranarrow lines.

Temperature-dependent micro-photoluminescence of individual CdSe self-assembled quantum dots

1999 ◽  
Vol 75 (2) ◽  
pp. 214-216 ◽  
Author(s):  
J. C. Kim ◽  
H. Rho ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
S. Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependent ◽  
Self Assembled

Field dependent carrier dynamics and charged excitons in InAs self-assembled quantum dots

1998 ◽  
Vol 2 (1-4) ◽  
pp. 627-631 ◽  
Author(s):  
K.H. Schmidt ◽  
U. Kunze ◽  
G. Medeiros-Ribeiro ◽  
J.M. Garcia ◽  
P. Wellmann ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Field Dependent ◽  
Self Assembled

Carrier dynamics in self-assembled InAs quantum dots

2001 ◽  
Author(s):  
Xinhai Zhang ◽  
Jian R. Dong ◽  
Soo-Jin Chua
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Inas Quantum Dots ◽  
Self Assembled

Temperature-Dependent Energy Gap Shift and Thermally Activated Transition in Multilayer CdTe/ZnTe Quantum Dots

2015 ◽  
Vol 15 (10) ◽  
pp. 8120-8124
Author(s):  
Minh Tan Man ◽  
Hong Seok Lee
Keyword(s):  
Quantum Dots ◽  
Energy Gap ◽  
Average Energy ◽  
Growth Conditions ◽  
Carrier Dynamics ◽  
Phonon Coupling ◽  
Temperature Quenching ◽  
Temperature Dependent ◽  
Thermally Activated ◽  
Best Fit

We investigated the influence of growth conditions on carrier dynamics in multilayer CdTe/ZnTe quantum dots (QDs) by monitoring the temperature dependence of the photoluminescence emission energy. The results were analyzed using the empirical Varshni and O’Donnell relations for temperature variation of the energy gap shift. Best fit values showed that the thermally activated transition between two different states occurs due to band low-temperature quenching with values separated by 5.0–6.5 meV. The addition of stack periods in multilayer CdTe/ZnTe QDs plays an important role in the energy gap shift, where the exciton binding energy is enhanced, and, conversely, the exciton-phonon coupling strength is suppressed with an average energy of 19.3–19.8 meV.

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