scholarly journals Band-gap profiling in amorphous silicon–germanium solar cells

2002 ◽  
Vol 80 (9) ◽  
pp. 1655-1657 ◽  
Author(s):  
Dietmar Lundszien ◽  
Friedhelm Finger ◽  
Heribert Wagner
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Amorphous Silicon Germanium

Computer-aided band gap engineering and experimental verification of amorphous silicon–germanium solar cells

2004 ◽  
Vol 81 (1) ◽  
pp. 73-86 ◽  
Author(s):  
Raul Jimenez Zambrano ◽  
Francisco A. Rubinelli ◽  
Wim M. Arnoldbik ◽  
Jatindra K. Rath ◽  
Ruud E.I. Schropp
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Experimental Verification ◽  
Silicon Germanium ◽  
Band Gap Engineering ◽  
Computer Aided ◽  
Amorphous Silicon Germanium

Hydrogenated amorphous silicon–germanium thin films with a narrow band gap for silicon-based solar cells

2011 ◽  
Vol 11 (1) ◽  
pp. S50-S53 ◽  
Author(s):  
Chao-Chun Wang ◽  
Chueh-Yang Liu ◽  
Shui-Yang Lien ◽  
Ko-Wei Weng ◽  
Jung-Jie Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Narrow Band ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Based ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon germanium by Hot Wire CVD as an alternative for microcrystalline silicon in tandem and triple junction solar cells

2014 ◽  
Vol 1666 ◽  
Author(s):  
L.W. Veldhuizen ◽  
Y. Kuang ◽  
N.J. Bakker ◽  
C.H.M. van der Werf ◽  
S.-J. Yun ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Short Circuit ◽  
Hydrogenated Amorphous Silicon ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

ABSTRACTWe study hydrogenated amorphous silicon germanium (a-SiGe:H) deposited by HWCVD for the use as low band gap absorber in multijunction junction solar cells. We deposited layers with Tauc optical band gaps of 1.21 to 1.56 eV and studied the hydrogen bonding with FTIR for layers that were deposited at several reaction pressures. For our reaction conditions, we found an optimal reaction pressure of 38 µbar. The material that is obtained under these conditions does not meet all device quality requirements for a-SiGe:H, which is, as we hypothesize, caused by the presence of He that is used to dilute the GeH4 source gas. We present an initial single junction n-i-p solar cell with a Tauc optical band gap of 1.45 eV and a short circuit current density of 18.7 mA/cm2.

Amorphous Silicon-Germanium Alloy Solar Cells with Profiled Band Gaps

1989 ◽  
Vol 149 ◽  
Author(s):  
J. Yang ◽  
R. Ross ◽  
T. Glatfelter ◽  
R. Mohr ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Collection Efficiency ◽  
Red Light ◽  
Light Illumination ◽  
Multiple Band ◽  
Amorphous Silicon Germanium ◽  
Conversion Efficiencies

ABSTRACTWe have studied the spectral dependence of various types of amorphous silicon-germanium (a-Si:Ge) alloy p-i-n solar cells in which the band gap of the intrinsic (i) layer is profiled between 1.4 and 1.7 eV. It is observed that the cell performance depends critically on the shape of the profile, especially for red-light illumination where the device output is found to vary by more than a factor of two. We have correlated the experimental data with optical absorption and dynamic internal collection efficiency (DICE) measurements. We have also fabricated two-cell tandem and three-cell triple devices by incorporating a-Si:Ge alloy with multiple band-gap profiles in the bottom cell and achieved 13.0% and 13.7% conversion efficiencies, respectively. These are the highest efficiency amorphous silicon-based alloy solar cells reported to date.

Band gap profiles of intrinsic amorphous silicon germanium films and their application to amorphous silicon germanium heterojunction solar cells

2016 ◽  
Vol 51 ◽  
pp. 245-249 ◽  
Author(s):  
Taweewat Krajangsang ◽  
Sorapong Inthisang ◽  
Adrien Dousse ◽  
Apichan Moollakorn ◽  
Aswin Hongsingthong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Heterojunction Solar Cells ◽  
Germanium Films ◽  
Amorphous Silicon Germanium

Status of Fluorinated Amorphous Silicon Alloy Multi-Junction Solar Cells

1986 ◽  
Vol 70 ◽  
Author(s):  
Jeffrey Yang ◽  
Robert Ross ◽  
Ralph Mohr ◽  
Jeffrey P. Fournier
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Elevated Temperatures ◽  
Dual Band ◽  
Prolonged Heating ◽  
Solar Cell Performance ◽  
Amorphous Silicon Germanium ◽  
Excellent Stability

ABSTRACTWe present in this paper updated solar cell performance data on fluorinated amorphous silicon and fluorinated amorphous silicon-germanium alloys. We have achieved a 9.7% conversion efficiency for a singlejunction device using a-Si:Ge:F:H alloy having an optical band gap of 1.5 eV. We have also achieved 12.5% and 13.0% efficiencies, respectively, for dual-band-gap tandem and triple devices using a-Si:F:H and a-Si:Ge:F:H alloys. These represent the highest values reported to date for their respective configurations. Multi-junction solar cells exhibit excellent stability not only in terms of light-induced effect but also in terms of prolonged heating at elevated temperatures.

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