Structural properties and electrical characteristics of electron-beam gun evaporated erbium oxide films

2002 ◽  
Vol 80 (12) ◽  
pp. 2156-2158 ◽  
Author(s):  
V. Mikhelashvili ◽  
G. Eisenstein ◽  
F. Edelmann
Keyword(s):  
Electron Beam ◽  
Structural Properties ◽  
Oxide Films ◽  
Electrical Characteristics ◽  
Erbium Oxide

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

Variations in optical and structural properties of zinc oxide films after laser processing

2016 ◽  
Vol 61 (11) ◽  
pp. 1744-1746 ◽  
Author(s):  
D. N. Redka ◽  
N. V. Mukhin ◽  
I. G. Zakharov
Keyword(s):  
Zinc Oxide ◽  
Structural Properties ◽  
Laser Processing ◽  
Oxide Films ◽  
Zinc Oxide Films

scholarly journals Electron Beam Effects on Silicon Oxide Films – Structure and Electrical Properties

2018 ◽  
Vol 24 (S1) ◽  
pp. 1810-1811 ◽  
Author(s):  
Krishna Kanth Neelisetty ◽  
Sebastian Gutsch ◽  
Falk von Seggern ◽  
Alan Molinari ◽  
Alexander Vahl ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Silicon Oxide ◽  
Oxide Films

Structural properties of electrochemically designed porous oxide films on AlMg1

1999 ◽  
Vol 468 (1) ◽  
pp. 121-126 ◽  
Author(s):  
Yong-Cheol Kim ◽  
Bodo Quint ◽  
Rudolf W. Kessler ◽  
Dieter Oelkrug
Keyword(s):  
Structural Properties ◽  
Oxide Films ◽  
Porous Oxide
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