Magnetic force microscopy using focused ion beam sharpened tip with deposited antiferro–ferromagnetic multiple layers

2002 ◽  
Vol 91 (10) ◽  
pp. 8843 ◽  
Author(s):  
Zhiyong Liu ◽  
You Dan ◽  
Qiu Jinjun ◽  
Yihong Wu
Keyword(s):  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Force Microscopy

scholarly journals High resolution magnetic force microscopy using focused ion beam modified tips

2002 ◽  
Vol 81 (5) ◽  
pp. 865-867 ◽  
Author(s):  
G. N. Phillips ◽  
M. Siekman ◽  
L. Abelmann ◽  
J. C. Lodder
Keyword(s):  
High Resolution ◽  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Force Microscopy

scholarly journals Focused Ion Beam Milled CoPt Magnetic Force Microscopy Tips for High Resolution Domain Images

2004 ◽  
Vol 40 (4) ◽  
pp. 2194-2196 ◽  
Author(s):  
L. Gao ◽  
L.P. Yue ◽  
T. Yokota ◽  
R. Skomski ◽  
S.H. Liou ◽  
...  
Keyword(s):  
High Resolution ◽  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Force Microscopy

Magnetic Force Microscopy Imaging of Current Paths

2002 ◽  
Vol 738 ◽  
Author(s):  
R. Yongsunthon ◽  
A. Stanishevsky ◽  
P. J. Rous ◽  
E. D. Williams
Keyword(s):  
Magnetic Force Microscopy ◽  
Room Temperature ◽  
Magnetic Force ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Microscopy Imaging ◽  
Gold Nanowire ◽  
Force Microscopy ◽  
Current Path ◽  
Dc Current

ABSTRACTWe demonstrate Magnetic Force Microscopy (MFM) imaging, at room temperature in air, of a 0.25mA DC current path in a 140nm-wide gold nanowire. The nanowire was created by focused ion beam milling of a 12μm wide Cr/Au line of 20nm/110nm Cr/Au thickness. Iterative fitting of the MFM data to an idealized model of the structure yielded a nanowire resistivity a factor of 3.5 higher than that of a control Cr/Au region which was unaffected by the ion beam processing. MFM imaging of an ion-implant patterned line shows current deflection around the implant region.

Magnetic Force Microscopy Signatures of Defects in Current-carrying Lines

2001 ◽  
Vol 699 ◽  
Author(s):  
Ruchirej Yongsunthon ◽  
Ellen D. Williams ◽  
Andrei Stanishevsky ◽  
Jonathan McCoy ◽  
Robert Pego ◽  
...  
Keyword(s):  
Current Density ◽  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Force Microscopy ◽  
Straight Line ◽  
Void Defects ◽  
Wide Line ◽  
Current Densities

AbstractThe spatial variation of current density in lines with model void defects fabricated using Focused-ion Beam (FIB) milling has been investigated using Magnetic Force Microscopy (MFM). The model defects were designed to systematically simulate the natural void shapes that occur in electromigration failure of current-carrying lines. Inhomogenous current density around the defects manifests itself in the form of atypical asymmetry in the MFM signal near the defects. The extent of the asymmetry is greatly dependent upon the defect geometry. At current densities of 3-5×106 A/cm2, an asymmetry in the MFM signal is clearly visible around defects, such as a (1×1) μ,2 notch and a (1×9) μm2 45°-slanted slit, at the edge of a 10μm wide line. We present a survey of MFM images of various defect structures in current-carrying lines that perturb the homogenous current flow of a straight line.

Study of MFM Application in Semiconductor Failure Analysis

2004 ◽  
Author(s):  
Way-Jam Chen ◽  
Lily Shiau ◽  
Ming-Ching Huang ◽  
Chia-Hsing Chao
Keyword(s):  
Magnetic Field ◽  
Failure Analysis ◽  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Current Flow ◽  
Force Microscopy ◽  
The Magnetic Field ◽  
A Current

Abstract In this study we have investigated the magnetic field associated with a current flowing in a circuit using Magnetic Force Microscopy (MFM). The technique is able to identify the magnetic field associated with a current flow and has potential for failure analysis.

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