Barium–strontium–titanate thin films for application in radio-frequency-microelectromechanical capacitive switches

2002 ◽  
Vol 80 (7) ◽  
pp. 1255-1257 ◽  
Author(s):  
S. W. Kirchoefer ◽  
E. J. Cukauskas ◽  
N. S. Barker ◽  
H. S. Newman ◽  
W. Chang
2001 ◽  
Vol 16 (9) ◽  
pp. 2680-2686 ◽  
Author(s):  
J. S. Fang ◽  
C. T. Chang ◽  
T. S. Chin

Barium-strontium titanate (BST) thin films were prepared by a two-step deposition using radio-frequency magnetron sputtering on Pt/Ti/SiO2-buffered Si(100) substrate. The initial BST layer thickness and intermediate annealing strongly affect the resultant electric properties of the two-step BST thin films. The optimal two-step BST films, with a first-layer thickness of 30 nm intermediate annealed at 610 °C under 1 torr oxygen. The dielectric breakdown and leakage current density of the two-step film are above 625 kV/cm and 9.5 nA/cm2 at 100 kV/cm, respectively, compared with 400 kV/cm and 17 nA/cm2 for the one-step films. We conclude that the two-step deposition dramatically improves dielectric breakdown and enhances leakage current density while keeping the dielectric constant uninfluenced.


2015 ◽  
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pp. 1529-1534 ◽  
Author(s):  
V. B. Shirokov ◽  
Yu. I. Golovko ◽  
V. M. Mukhortov ◽  
Yu. I. Yuzyuk ◽  
P. E. Janolin ◽  
...  

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pp. 6531-6535 ◽  
Author(s):  
Yanhua Fan ◽  
Shuhui Yu ◽  
Rong Sun ◽  
Lei Li ◽  
Yansheng Yin ◽  
...  

2006 ◽  
Vol 86 (1) ◽  
pp. 141-148 ◽  
Author(s):  
TAE-SOON YUN ◽  
HEE NAM ◽  
KI-CHUL YOON ◽  
JONG-CHUL LEE ◽  
HYUN-SUK KIM ◽  
...  

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