Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy

2002 ◽  
Vol 80 (5) ◽  
pp. 802-804 ◽  
Author(s):  
Shigeo Yamaguchi ◽  
Yasuo Iwamura ◽  
Yasuhiro Watanabe ◽  
Masayoshi Kosaki ◽  
Yohei Yukawa ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Electrical Properties ofHg1-xCdxTeGrown by Low-Temperature Metalorganic Vapor Phase Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 12A) ◽  
pp. 6481-6485 ◽  
Author(s):  
Touati Ferid ◽  
Kazuhito Yasuda ◽  
Hiroki Hatano ◽  
Takayuki Maejima ◽  
Masaya Minamide ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Electrical Properties of Halogen-Doped CdTe Layers on Si Substrates Grown by Metalorganic Vapor-Phase Epitaxy

2010 ◽  
Vol 39 (7) ◽  
pp. 1118-1123 ◽  
Author(s):  
K. Yasuda ◽  
M. Niraula ◽  
H. Oka ◽  
T. Yoneyama ◽  
K. Matsumoto ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Si Substrates

Crystalline and Electrical Properties of AlInN/GaN and AlN/GaN superlattices on GaN Grown by Metalorganic Vapor Phase Epitaxy

2001 ◽  
Vol 693 ◽  
Author(s):  
Shigeo Yamaguchi ◽  
Yasuo Iwamura ◽  
Masayoshi Kosaki ◽  
Yasuhiro Watanabe ◽  
Shingo Mochizuki ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Carrier Density ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Eighth Order ◽  
Satellite Peak ◽  
X Ray ◽  
A Value

AbstractWe have studied the crystalline and electrical properties of AlInN/GaN superlattices (SLs) and strained AlN/GaN SLs on GaN grown by metalorganic vapor phase epitaxy. A (0001) sapphire substrate was used. The SLs were grown using N2 carrier gas. X-ray analysis showed the eighth order satellite peak in AlInN/GaN SLs. Hall measurement showed an electron mobility of 946 cm2/Vs at highest (a sheet carrier density of 2.9x1012 cm-2) for AlInN/GaN 5SLs on GaN at 295K, and showed a value of 11432 cm2/Vs (1.99x1012cm-2) at 170K, and a value of 2610 cm2/Vs (3.38x1012cm-2) at 295K for AlN/GaN 10SLs on GaN.

Mechanism of arsenic incorporation and electrical properties in CdTe layers grown by metalorganic vapor phase epitaxy

1992 ◽  
Vol 71 (6) ◽  
pp. 2669-2674 ◽  
Author(s):  
Mitsuru Ekawa ◽  
Kazuhito Yasuda ◽  
Touati Ferid ◽  
Manabu Saji ◽  
Akikazu Tanaka
Keyword(s):  
Electrical Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Arsenic Incorporation

On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy

2012 ◽  
Vol 520 (21) ◽  
pp. 6619-6625 ◽  
Author(s):  
Roberto Jakomin ◽  
Antonella Parisini ◽  
Luciano Tarricone ◽  
Massimo Longo ◽  
Beatrice Fraboni ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Si Doped
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