Anharmonicity of the C–H stretch mode in SiC: Unambiguous identification of hydrogen–silicon vacancy defect

2002 ◽  
Vol 80 (2) ◽  
pp. 237-239 ◽  
Author(s):  
A. Gali ◽  
B. Aradi ◽  
D. Heringer ◽  
W. J. Choyke ◽  
R. P. Devaty ◽  
...  
ACS Photonics ◽  
2017 ◽  
Vol 4 (5) ◽  
pp. 1054-1059 ◽  
Author(s):  
Junfeng Wang ◽  
Xiaoming Zhang ◽  
Yu Zhou ◽  
Ke Li ◽  
Ziyu Wang ◽  
...  

2012 ◽  
Vol 717-720 ◽  
pp. 255-258 ◽  
Author(s):  
Adam Gali

Isolated point defects possessing high spin ground state and below-band-gap excitation may play a key role in realizing solid state quantum bits in semiconductors which are the basic building blocks of quantum computers. Silicon vacancy in silicon carbide provides these features making it a feasible candidate in this special and emerging field of science. However, it has been not clarified what is the exact nature of the luminescence of silicon vacancy detected in hexagonal polytypes. This is the first crucial step needed to understand this basic defect in silicon carbide. We report density functional theory based calculations on silicon vacancy defect. Based on the obtained results we identify the silicon vacancy related photoluminescence signals with the negatively charged defect.


2014 ◽  
Vol 16 (2) ◽  
pp. 023021 ◽  
Author(s):  
Matthias Leifgen ◽  
Tim Schröder ◽  
Friedemann Gädeke ◽  
Robert Riemann ◽  
Valentin Métillon ◽  
...  

2021 ◽  
Vol 126 (21) ◽  
Author(s):  
Christopher L. Smallwood ◽  
Ronald Ulbricht ◽  
Matthew W. Day ◽  
Tim Schröder ◽  
Kelsey M. Bates ◽  
...  
Keyword(s):  

2021 ◽  
pp. 2000631
Author(s):  
Zihao Wang ◽  
Xiumei Dong ◽  
Zhiyuan Chen ◽  
Houhua Xiong ◽  
Jie Gao ◽  
...  

2021 ◽  
Vol 130 (2) ◽  
pp. 024301
Author(s):  
Kelsey M. Bates ◽  
Matthew W. Day ◽  
Christopher L. Smallwood ◽  
Rachel C. Owen ◽  
Tim Schröder ◽  
...  

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