Nanovoid-related large redshift of photoluminescence peak energy in hydrogenated amorphous silicon

2002 ◽  
Vol 80 (1) ◽  
pp. 40-42 ◽  
Author(s):  
Daxing Han ◽  
Guozhen Yue ◽  
Keda Wang ◽  
Jonathan Baugh ◽  
Yue Wu ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Large Redshift ◽  
Peak Energy ◽  
Hydrogenated Amorphous ◽  
Photoluminescence Peak

Kinetics of Light-Induced Deffect Formation and Annealing in Hydrogenated Amorphous Silicon Alloyed with Sulfur

1998 ◽  
Vol 507 ◽  
Author(s):  
Baojie Yan ◽  
Shenlin Chen ◽  
P. C. Taylor
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Spin Density ◽  
Hydrogenated Amorphous Silicon ◽  
Activation Energies ◽  
Annealing Behavior ◽  
Peak Energy ◽  
Induced Defects ◽  
Hydrogenated Amorphous ◽  
Kinetics Of

ABSTRACTThe creation and annealing kinetics of light-induced defects in a-SiSx:H are studied by ESR and LESR measurements. The dispersion of defect creation after prolonged illumination with white light is greater for a-SiSx:H than that for undoped a-Si:H. In addition, the saturated value of the dark spin density is slightly lower for a-SiSx:H than that for a-Si:H. The annealing behavior can be fitted with a Gaussian distribution of annealing activation energies as is the case for undoped a-Si:H. The incorporation of sulfur decreases the peak energy and increases the width of the distribution of activation energies. Light-soaking does not change the low temperature LESR spectrum and LESR spin density.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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