Electrical characteristics of a TaOxNy/ZrSixOy stack gate dielectric for metal–oxide–semiconductor device applications

Hyungsuk Jung; Hyundoek Yang; Kiju Im; Hyunsang Hwang

doi:10.1063/1.1427155

Electrical characteristics of a TaOxNy/ZrSixOy stack gate dielectric for metal–oxide–semiconductor device applications

Applied Physics Letters ◽

10.1063/1.1427155 ◽

2001 ◽

Vol 79 (26) ◽

pp. 4408-4410 ◽

Cited By ~ 4

Author(s):

Hyungsuk Jung ◽

Hyundoek Yang ◽

Kiju Im ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Device Applications

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Electrical Characteristics of TiO2/ZrSixOyStack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.6803 ◽

2001 ◽

Vol 40 (Part 1, No. 12) ◽

pp. 6803-6804 ◽

Cited By ~ 3

Author(s):

Hyunjun Sim ◽

Sanghun Jeon ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Device Applications

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Electrical Characteristics of ZrO2Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.5129 ◽

2002 ◽

Vol 41 (Part 1, No. 8) ◽

pp. 5129-5130 ◽

Cited By ~ 3

Author(s):

Sangmoo Choi ◽

Sanghun Jeon ◽

Hyunsang Hwang ◽

Young J. Song ◽

Jung-Wook Lim ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Capping Layer ◽

Device Applications

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Thin germanium-carbon alloy layers grown directly on silicon for metal-oxide-semiconductor device applications

Applied Physics Letters ◽

10.1063/1.2195008 ◽

2006 ◽

Vol 88 (15) ◽

pp. 152101 ◽

Cited By ~ 15

Author(s):

D. Q. Kelly ◽

I. Wiedmann ◽

J. P. Donnelly ◽

S. V. Joshi ◽

S. Dey ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Applications

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Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Applied Physics Letters ◽

10.1063/1.3007978 ◽

2008 ◽

Vol 93 (19) ◽

pp. 193504 ◽

Cited By ~ 26

Author(s):

Rahul Suri ◽

Bongmook Lee ◽

Daniel J. Lichtenwalner ◽

Nivedita Biswas ◽

Veena Misra

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Layer Deposition

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Aspects of the Conductivity Modulation Enhancement Effect in a 4500 V Planar Metal Oxide Semiconductor Device and Its Electrical Characteristics

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.4751 ◽

1998 ◽

Vol 37 (Part 1, No. 9A) ◽

pp. 4751-4757 ◽

Cited By ~ 3

Author(s):

Kazuya Nakayama ◽

Hideo Matsuda

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Enhancement Effect ◽

Electrical Characteristics

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Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric

Applied Physics Letters ◽

10.1063/1.3264086 ◽

2009 ◽

Vol 95 (19) ◽

pp. 192113 ◽

Cited By ~ 7

Author(s):

Hong Bae Park ◽

Chang Seo Park ◽

Chang Yong Kang ◽

Seung-Chul Song ◽

Byoung Hun Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Gate Electrode ◽

Capping Layer

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Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2949079 ◽

2008 ◽

Vol 92 (24) ◽

pp. 243506 ◽

Cited By ~ 23

Author(s):

Rahul Suri ◽

Daniel J. Lichtenwalner ◽

Veena Misra

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Elemental Arsenic

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Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications

Applied Physics Letters ◽

10.1063/1.4726284 ◽

2012 ◽

Vol 100 (23) ◽

pp. 233506 ◽

Cited By ~ 18

Author(s):

Abhishek Misra ◽

Mayur Waikar ◽

Amit Gour ◽

Hemen Kalita ◽

Manali Khare ◽

...

Keyword(s):

Metal Oxide ◽

Work Function ◽

Field Effect ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Multilayer Graphene ◽

Gate Electrode ◽

Work Function Tuning ◽

Device Applications

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with ZrO2 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2723861 ◽

2007 ◽

Vol 101 (9) ◽

pp. 094105 ◽

Cited By ~ 17

Author(s):

De-Cheng Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-min Lee ◽

Pi-Chun Juan

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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