Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer

2001 ◽  
Vol 79 (25) ◽  
pp. 4145-4147 ◽  
Author(s):  
E. Napolitani ◽  
A. Coati ◽  
D. De Salvador ◽  
A. Carnera ◽  
S. Mirabella ◽  
...  
Keyword(s):  
Complete Suppression ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Complete Suppression of the Transient Enhanced Diffusion of B Implanted in Preamorphized Si by Interstitial Trapping in a Spatially Separated C-Rich Layer

2002 ◽  
Vol 717 ◽  
Author(s):  
E. Napolitani ◽  
A. Coati ◽  
D. De Salvador ◽  
A. Carnera ◽  
S. Mirabella ◽  
...  
Keyword(s):  
Silicon Layer ◽  
Complementary Metal Oxide Semiconductor ◽  
Amorphous Layer ◽  
Oxide Semiconductor ◽  
Complete Suppression ◽  
Silicon Sample ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Ultra Shallow Junctions ◽  
Technology Nodes

AbstractA method for completely suppressing the transient enhanced diffusion (TED) of boron implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular beam epitaxy (MBE) grown silicon sample that has been previously amorphized by silicon implantation. The sample is then annealed in order to epitaxially regrow the amorphous layer and electrically activate the dopant. The back-flow of silicon interstitials released by the preamorphization end-of-range (EOR) damage is completely trapped by a carbon-rich silicon layer interposed by MBE between the damage and the implanted boron. No appreciable TED is observed in the samples up to complete dissolution of the EOR damage, and complete electrical activation is obtained. The method might be considered for the realization of ultra shallow junctions for the far future complementary metal-oxide semiconductor technology nodes.

scholarly journals Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation

1997 ◽  
Vol 469 ◽  
Author(s):  
V. C. Venezia ◽  
T. E. Haynes ◽  
A. Agarwal ◽  
H. -J. Gossmann ◽  
D. J. Eaglesham
Keyword(s):  
Surface Layer ◽  
Surface Region ◽  
Silicon On Insulator ◽  
Rich Region ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Float Zone ◽  
Transient Enhanced Diffusion

ABSTRACTThe diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si+, 1×1016/cm2, implant. A 4× larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10× smaller diffusion relative to markers without the MeV Si+ implant. This data demonstrates that a 2 MeV Si+ implant injects vacancies into the near surface region.

Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

1998 ◽  
Vol 532 ◽  
Author(s):  
M. Kase ◽  
Y Kikuchi ◽  
H. Niwa ◽  
T. Kimura
Keyword(s):  
Junction Depth ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Junction Formation

ABSTRACTThis paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.

Effects of Carbon Co-Implantation on Transient Enhanced Diffusion and Performances of the Phosphorus Doped Ultra-Shallow Junction Nano NMOSFET

2013 ◽  
Vol 284-287 ◽  
pp. 98-102
Author(s):  
Hung Yu Chiu ◽  
Yean Kuen Fang ◽  
Feng Renn Juang
Keyword(s):  
Cmos Technology ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Technology Applications ◽  
Implantation Process ◽  
Phosphorus Doped

The carbon (C) co-implantation and advanced flash anneal were employed to form the ultra shallow junction (USJ) for future nano CMOS technology applications. The effects of the C co-implantation process on dopant transient enhanced diffusion (TED) of the phosphorus (P) doped nano USJ NMOSFETs were investigated in details. The USJ NMOSFETs were prepared by a foundry’s 55 nano CMOS technology. Various implantation energies and doses for both C and P ions were employed. Results show the suppression of the TED is strongly dependent on both C and P implantation conditions. Besides, the mechanisms of P TED and suppression by C ion co-implantation were illustrated comprehensively with schematic models.

High Performance 0.2 µm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1054-1058 ◽  
Author(s):  
Yukio Nishida ◽  
Hirokazu Sayama ◽  
Satoshi Shimizu ◽  
Takashi Kuroi ◽  
Akihiko Furukawa ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Performance ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dual Gate
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