Enhanced dopant activation and elimination of end-of-range defects in BF2+-implanted silicon-on-insulator by high-density current
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2005 ◽
Vol 237
(1-2)
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pp. 167-173
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2016 ◽
Vol 57
(2)
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pp. 164-169
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2000 ◽
Vol 39
(Part 1, No. 4A)
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pp. 1903-1907
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2016 ◽
Vol 58
(5)
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pp. 946-951
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2009 ◽
Vol 27
(3)
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pp. 511-520
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