Energy transfer to porphyrin derivative dopants in polymer light-emitting diodes

2002 ◽  
Vol 91 (1) ◽  
pp. 99 ◽  
Author(s):  
R. W. T. Higgins ◽  
A. P. Monkman ◽  
H.-G. Nothofer ◽  
U. Scherf
2001 ◽  
Vol 34 (26) ◽  
pp. 9183-9188 ◽  
Author(s):  
Liming Ding ◽  
Frank E. Karasz ◽  
Zhiqun Lin ◽  
Min Zheng ◽  
Liang Liao ◽  
...  

Joule ◽  
2019 ◽  
Vol 3 (10) ◽  
pp. 2381-2389 ◽  
Author(s):  
Le Yang ◽  
Vincent Kim ◽  
Yaxiao Lian ◽  
Baodan Zhao ◽  
Dawei Di

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.


2021 ◽  
Vol 9 (36) ◽  
pp. 12068-12072
Author(s):  
Wentao Li ◽  
Jiaxiang Liu ◽  
Baowen Wang ◽  
Siyu Hou ◽  
Xingqiang Lü ◽  
...  

Based on geometrical isomerisation of [Ir(C^N1)(C^N2)((N^O))]-tris-heteroleptic Ir(iii)-complexes, the augmented transition dipole transition (TMD) with a preferential horizontal orientation, which is beneficial for their NIR-phosphorescence, is reported.


2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Li Zhang ◽  
Changjiu Sun ◽  
Tingwei He ◽  
Yuanzhi Jiang ◽  
Junli Wei ◽  
...  

AbstractQuasi-two-dimensional (quasi-2D) perovskites have attracted extraordinary attention due to their superior semiconducting properties and have emerged as one of the most promising materials for next-generation light-emitting diodes (LEDs). The outstanding optical properties originate from their structural characteristics. In particular, the inherent quantum-well structure endows them with a large exciton binding energy due to the strong dielectric- and quantum-confinement effects; the corresponding energy transfer among different n-value species thus results in high photoluminescence quantum yields (PLQYs), particularly at low excitation intensities. The review herein presents an overview of the inherent properties of quasi-2D perovskite materials, the corresponding energy transfer and spectral tunability methodologies for thin films, as well as their application in high-performance LEDs. We then summarize the challenges and potential research directions towards developing high-performance and stable quasi-2D PeLEDs. The review thus provides a systematic and timely summary for the community to deepen the understanding of quasi-2D perovskite materials and resulting LED devices.


2001 ◽  
Vol 79 (2) ◽  
pp. 174-176 ◽  
Author(s):  
T. M. Brown ◽  
R. H. Friend ◽  
I. S. Millard ◽  
D. J. Lacey ◽  
J. H. Burroughes ◽  
...  

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