Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO[sub 2]

2002 ◽  
Vol 91 (1) ◽  
pp. 534 ◽  
Author(s):  
P. G. Kik ◽  
A. Polman
Keyword(s):  
Si Nanocrystal ◽  
Er Doped

Coupling and Cooperative Up-conversion Coefficients in Er-doped Si Nanocrystals

2003 ◽  
Vol 770 ◽  
Author(s):  
Domenico Pacifici ◽  
Giorgia Franzò ◽  
Fabio Iacona ◽  
Francesco Priolo
Keyword(s):  
Steady State ◽  
Energy Level ◽  
Energy Level Scheme ◽  
Time Resolved ◽  
A Value ◽  
Si Nanocrystals ◽  
Si Nanocrystal ◽  
Conversion Coefficients ◽  
Quantitative Understanding ◽  
Er Doped

AbstractIn the present work, a quantitative understanding of the Er-doped Si nanocrystals interaction is reported. We present a model based on an energy level scheme taking into account the coupling between each Si nanocrystal and the neighboring Er ions. By fitting the steady state and time resolved luminescence signals at both the 1.54 and 0.98 μm Er lines we were able to determine a value of 3×10-15 cm3 s-1 for the coupling coefficient. Moreover, a strong cooperative up-conversion mechanism, active between two excited Er ions and characterized by a coefficient of 7×10-17 cm3 s-1, will be shown to be active in the system, demonstrating that each Si nanocrystal can actually excite more than one Er ion.

Towards Er-doped Si nanocrystal sensitized microcavity lasers and amplifiers

2004 ◽  
Author(s):  
A. Polman ◽  
T.J. Kippenberg ◽  
B. Min ◽  
J. Kalkman ◽  
R. Walters ◽  
...  
Keyword(s):  
Microcavity Lasers ◽  
Si Nanocrystal ◽  
Er Doped

Microscopic Structure of Er-Related Optically Active Centers in Si

2003 ◽  
Vol 770 ◽  
Author(s):  
H. Przybylinska ◽  
N. Q. Vinh ◽  
B.A. Andreev ◽  
Z. F. Krasil'nik ◽  
T. Gregorkiewicz
Keyword(s):  
Ground State ◽  
Photoluminescence Spectrum ◽  
Zeeman Effect ◽  
Optically Active ◽  
Single Type ◽  
Active Centers ◽  
Mbe Growth ◽  
Spectral Components ◽  
Er Doped ◽  
Successful Observation

AbstractA successful observation and analysis of the Zeeman effect on the near 1.54 μm photoluminescence spectrum in Er-doped crystalline MBE-grown silicon are reported. A clearly resolved splitting of 5 major spectral components was observed in magnetic fields up to 5.5 T. Based on the analysis of the data the symmetry of the dominant optically active center was conclusively established as orthorhombic I (C2v), with g‼≈18.4 and g⊥≈0 in the ground state. The fact that g⊥≈0 explains why EPR detection of Er-related optically active centers in silicon may be difficult. Preferential generation of a single type of an optically active Er-related center in MBE growth confirmed in this study is essential for photonic applications of Si:Er.

Luminescent Er doped microparticles in a semiconductor matrix

1990 ◽  
Vol 26 (19) ◽  
pp. 1556 ◽  
Author(s):  
P.N. Favennec ◽  
H. L'Haridon ◽  
D. Moutonnet ◽  
M. Salvi ◽  
A.C. Papdopoulo
Keyword(s):  
Semiconductor Matrix ◽  
Er Doped

scholarly journals Temperature sensor based on Er-doped Cascaded-Peanut Taper Structure in-line interferometer in fiber ring laser

2021 ◽  
pp. 1-1
Author(s):  
Weihao Lin ◽  
Fang Zhao ◽  
Li-Yang Shao ◽  
Mang I Vai ◽  
Perry Ping Shum ◽  
...  
Keyword(s):  
Temperature Sensor ◽  
Ring Laser ◽  
Fiber Ring Laser ◽  
Fiber Ring ◽  
Er Doped

Unveiling Quantum Superparamagnetism by Interacting Monodomains in Multiferroic Er-Doped Bismuth Ferrate Nanostructured Particles

2021 ◽  
Vol 125 (11) ◽  
pp. 6449-6460
Author(s):  
Subhash Sharma ◽  
C. F. Sánchez Valdés ◽  
J. L. Sánchez Llamazares ◽  
J. M. Siqueiros ◽  
Oscar Raymond Herrera
Keyword(s):  
Nanostructured Particles ◽  
Er Doped
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