Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy

2001 ◽  
Vol 79 (17) ◽  
pp. 2776-2778 ◽  
Author(s):  
J. H. Zhao ◽  
F. Matsukura ◽  
K. Takamura ◽  
E. Abe ◽  
D. Chiba ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism

Room-temperature ferromagnetism in (Mn, N)-codoped TiO2 films grown by plasma assisted molecular beam epitaxy

2008 ◽  
Vol 104 (9) ◽  
pp. 093914 ◽  
Author(s):  
X. Y. Li ◽  
S. X. Wu ◽  
L. M. Xu ◽  
Y. J. Liu ◽  
X. J. Xing ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Tio2 Films ◽  
Codoped Tio2

scholarly journals Peculiarly strong room-temperature ferromagnetism from low Mn-doping in ZnO grown by molecular beam epitaxy

AIP Advances ◽  
2013 ◽  
Vol 3 (3) ◽  
pp. 032110 ◽  
Author(s):  
Zheng Zuo ◽  
Muhammad Morshed ◽  
W. P. Beyermann ◽  
Jian-Guo Zheng ◽  
Yan Xin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Mn Doping

Strong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy

2012 ◽  
Vol 112 (5) ◽  
pp. 053708 ◽  
Author(s):  
Zheng Zuo ◽  
Huimei Zhou ◽  
Mario J. Olmedo ◽  
Jieying Kong ◽  
Ward P. Beyermann ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
High Quality ◽  
Doped Zno ◽  
Mn Doped

Accompanying growth and room-temperature ferromagnetism of η-Mn3N2 thin films by molecular beam epitaxy

2013 ◽  
Vol 531 ◽  
pp. 228-232 ◽  
Author(s):  
Fengmei Yu ◽  
Yajing Liu ◽  
Mei Yang ◽  
Shuxiang Wu ◽  
Wenqi Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism

Enhancement of room-temperature ferromagnetism in manganese oxide thin films grown on Nb:SrTiO3 substrates

2014 ◽  
Vol 28 (20) ◽  
pp. 1450162
Author(s):  
P. Hu ◽  
S. X. Wu ◽  
S. W. Li
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Manganese Oxide ◽  
Growth Process ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Experimental Results ◽  
Oxide Thin Films

In this paper, α- Mn 2 O 3 thin films were fabricated by plasma-assisted molecular beam epitaxy on SrTiO 3 and Nb : SrTiO 3, respectively. The grown samples showed room temperature ferromagnetism (RFM) properties. All the experimental results manifested that the RFM properties in undoped thin films were induced by oxygen vacancies formed during the growth process. Even more, the ferromagnetism of thin films grown on Nb : SrTiO 3 were enhanced, and these results confirmed the fact that oxygen vacancies induced ferromagnetism. That is to say, more oxygen vacancies result the more unpaired electrons induced prominent abnormal spin causing ferromagnetism.

Room temperature ferromagnetism in CrGaN: Dependence on growth conditions in rf N-plasma molecular beam epitaxy

2005 ◽  
Vol 285 (3) ◽  
pp. 300-311 ◽  
Author(s):  
Muhammad B. Haider ◽  
Rong Yang ◽  
Hamad Al-Brithen ◽  
Costel Constantin ◽  
David C. Ingram ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Growth Conditions

Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films

2015 ◽  
Vol 3 (8) ◽  
pp. 1830-1834 ◽  
Author(s):  
Daoyou Guo ◽  
Zhenping Wu ◽  
Yuehua An ◽  
Xiaojiang Li ◽  
Xuncai Guo ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Epitaxial Thin Films ◽  
Laser Molecular Beam Epitaxy ◽  
Mn Doped

Mn-doped monoclinic β-(Ga1−xMnx)2O3 thin films were epitaxially grown on α-Al2O3 (0001) substrates by alternately depositing Ga2O3 and Mn layers using the laser molecular beam epitaxy technique.

Visible photoluminescence and room temperature ferromagnetism in high In-content InGaN:Yb nanorods grown by molecular beam epitaxy

2015 ◽  
Vol 118 (12) ◽  
pp. 125707 ◽  
Author(s):  
K. Dasari ◽  
J. Wang ◽  
M. J.-F. Guinel ◽  
W. M. Jadwisienczak ◽  
H. Huhtinen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Room Temperature Ferromagnetism ◽  
Visible Photoluminescence

Room-Temperature Wafer Bonded Multi-Junction Solar Cell Grown by Solid State Molecular Beam Epitaxy

MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2907-2916 ◽  
Author(s):  
Shulong Lu ◽  
Shiro Uchida
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Molecular Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Device Structure ◽  
Junction Solar Cell

ABSTRACTWe studied the InGaP/GaAs//InGaAsP/InGaAs four-junction solar cells grown by molecular beam epitaxy (MBE), which were fabricated by the novel wafer bonding. In order to reach a higher conversion efficiency at highly concentrated illumination, heat generation should be minimized. We have improved the device structure to reduce the thermal and electrical resistances. Especially, the bond resistance was reduced to be the lowest value of 2.5 × 10-5 Ohm cm2 ever reported for a GaAs/InP wafer bond, which was obtained by the specific combination of p+-GaAs/n-InP bonding and by using room-temperature wafer bonding. Furthermore, in order to increase the short circuit current density (Jsc) of 4-junction solar cell, we have developed the quality of InGaAsP material by increasing the growth temperature from 490 °C to 510 °C, which leads to a current matching. In a result, an efficiency of 42 % at 230 suns of the four-junction solar cell fabricated by room-temperature wafer bonding was achieved.

Comparison of the Optical Properties of Er3+ Doped Gallium Nitride Prepared by Metalorganic Molecular Beam Epitaxy (MOMBE) and Solid Source Molecular Beam Epitaxy (SSMBE)

1999 ◽  
Vol 595 ◽  
Author(s):  
U. Hömmerich ◽  
J. T. Seo ◽  
J. D. MacKenzie ◽  
C. R. Abernathy ◽  
R. Birkhahn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Excited States ◽  
Room Temperature ◽  
Molecular Beam ◽  
Average Lifetime ◽  
Green Luminescence ◽  
Si Substrates ◽  
Lifetime Analysis ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Er Doped

AbstractWe report on the luminescence properties of Er doped GaN grown prepared by metalorganic molecular beam epitaxy (MOMBE) and solid-source molecular beam epitaxy (SSMBE) on Si substrates. Both types of samples emitted characteristic 1.54 µm PL resulting from the intra-4f Er3+ transition 4I13/2→4I15/2. Under below-gap excitation the samples exhibited very similar 1.54 µm PL intensities. On the contrary, under above-gap excitation GaN: Er (SSMBE) showed ∼80 times more intense 1.54 µm PL than GaN: Er (MOMBE). In addition, GaN: Er (SSMBE) also emitted intense green luminescence at 537 nm and 558 nm, which was not observed from GaN: Er (MOMBE). The average lifetime of the green PL was determined to be 10.8 µs at 15 K and 5.5 µs at room temperature. A preliminary lifetime analysis suggests that the decrease in lifetime is mainly due to the strong thermalization between the 2H11/2 and 4S3/2 excited states. Nonradiative decay processes are expected to only weakly affect the green luminescence.

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