Ultrafast electron trapping times in low-temperature-grown gallium arsenide: The effect of the arsenic precipitate spacing and size

2001 ◽  
Vol 79 (18) ◽  
pp. 2883-2885 ◽  
Author(s):  
P. A. Loukakos ◽  
C. Kalpouzos ◽  
I. E. Perakis ◽  
Z. Hatzopoulos ◽  
M. Logaki ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Low Temperature ◽  
Electron Trapping

Low-temperature atomic assembly of stoichiometric gallium arsenide from equiatomic vapor

2006 ◽  
Vol 286 (1) ◽  
pp. 197-204 ◽  
Author(s):  
D.A. Murdick ◽  
X.W. Zhou ◽  
H.N.G. Wadley
Keyword(s):  
Gallium Arsenide ◽  
Low Temperature

Photoluminescence from hot carriers in low‐temperature‐grown gallium arsenide

1992 ◽  
Vol 60 (18) ◽  
pp. 2246-2248 ◽  
Author(s):  
H. M. van Driel ◽  
X.‐Q. Zhou ◽  
W. W. Rühle ◽  
J. Kuhl ◽  
K. Ploog
Keyword(s):  
Gallium Arsenide ◽  
Low Temperature ◽  
Hot Carriers

Influence of Be Doping on Material Properties of Low-Temperature-Grown GaAs

2002 ◽  
Vol 719 ◽  
Author(s):  
Saulius Marcinkevièius ◽  
Andreas Gaarder ◽  
Jörg Siegert ◽  
Jean-Fraņois Roux ◽  
Jean-Louis Coutaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Material Properties ◽  
Doping Level ◽  
Carrier Dynamics ◽  
Electron Trapping ◽  
Structural Quality ◽  
Trapping Time ◽  
Ultrafast Carrier ◽  
Antisite Defects ◽  
Low Temperature Grown Gaas

AbstractA number of experimental techniques were used to characterize structural quality, ultrafast carrier dynamics and deep center properties of low-temperature-grown GaAs doped with Be. GaAs layers grown at 280 °C, doped with the Be concentration from 5×1017 cm-3 to 2×1019 cm-3 and annealed at temperatures between 500 and 800 °C were studied. Electron trapping times in these samples varied from hundreds of femtoseconds to several picoseconds. A non-monotonous electron trapping time dependence on Be doping level is explained by the influence of triple-charged gallium vacancies and single-charged Be-acceptors on the number of ionized As antisite defects.

Electron mobility in low temperature grown gallium arsenide

1995 ◽  
Vol 35 (1-3) ◽  
pp. 330-333 ◽  
Author(s):  
P. Arifin ◽  
E.M. Goldys ◽  
T.L. Tansley
Keyword(s):  
Gallium Arsenide ◽  
Low Temperature ◽  
Electron Mobility
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