Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN

2001 ◽  
Vol 79 (16) ◽  
pp. 2573-2575 ◽  
Author(s):  
Ching-Ting Lee ◽  
Yow-Jon Lin ◽  
Day-Shan Liu
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Surface State ◽  
Schottky Barrier Height ◽  
State Density ◽  
Surface State Density

Schottky barrier height and interfacial state density on oxide-GaAs interface

2003 ◽  
Vol 94 (1) ◽  
pp. 348-353 ◽  
Author(s):  
J. S. Hwang ◽  
C. C. Chang ◽  
M. F. Chen ◽  
C. C. Chen ◽  
K. I. Lin ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
State Density ◽  
Interfacial State

Determination of surface barrier height and surface state density in GaN films grown on sapphire substrates

2004 ◽  
Vol 831 ◽  
Author(s):  
Seong-Eun Park ◽  
Joseph J. Kopanski ◽  
Youn-Seon Kang ◽  
Lawrence H. Robins ◽  
Hyun-Keel Shin
Keyword(s):  
Barrier Height ◽  
Surface State ◽  
Deep Level ◽  
Surface States ◽  
State Density ◽  
Beam Power ◽  
Surface Barrier ◽  
Surface State Density ◽  
Sapphire Substrates ◽  
Surface Electric Field

ABSTRACTPhotoreflectance (PR) modulation spectroscopy was performed to investigate surface properties of GaN films grown on sapphire substrates. From the period of the Franz-Keldysh oscillations, the surface electric field across the GaN space charge region was found to be (197 ± 11) kV/cm, which corresponds to a surface state density of 1.0×1012 cm−2. A surface barrier height of 0.71 eV was determined by fitting the dependence of the PR intensities on pump beam power density. We suggest that a deep level is formed at 2.68 eV above the GaN valence band edge due to the large density of surface states.

Electron Bean Induced Defects in Silicon/Indium Oxide Heterojunctions and Interfacial Reactions During Annealing

1986 ◽  
Vol 76 ◽  
Author(s):  
S. Kar ◽  
A. Pandey ◽  
R. K. Dwivedi
Keyword(s):  
Experimental Data ◽  
Charge Density ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Fixed Charge Density ◽  
Induced Defects

ABSTRACTSi/In203 diodes have been prepared by e-beam evaporation of In203 tablets. Annealing of these devices was carried out in N2 and H2 /N2 mixture at 1 atm. in the temperature range of 400–800°C. Experimental data indicated a large increase in the Schottky barrier height and growth of interfacial oxide during annealing. The interface state density was reduced by a factor of 2, but the results indicated the increase in the barrier height to be mainly due to reduction of positive fixed charge density.

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements

2011 ◽  
Vol 98 (16) ◽  
pp. 162111 ◽  
Author(s):  
J. Kováč ◽  
R. Šramatý ◽  
A. Chvála ◽  
H. Sibboni ◽  
E. Morvan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Optical Measurements

Effective Schottky Barrier Height Lowering by TiN Capping Layer for TiSix/Si Power Diode

2015 ◽  
Vol 36 (6) ◽  
pp. 597-599 ◽  
Author(s):  
Lin-Lin Wang ◽  
Wu Peng ◽  
Yu-Long Jiang ◽  
Bing-Zong Li
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Capping Layer ◽  
Power Diode

Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

2007 ◽  
Vol 994 ◽  
Author(s):  
S. L. Liew ◽  
C. T. Chua ◽  
D. H. L Seng ◽  
D. Z. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Dopant Segregation

AbstractSchottky barrier height (ÖB) engineering of NiGe/n-Ge(001) diodes was achieved through germanidation induced dopant segregation on As implanted-Ge substrates. was reduced from 0.55 eV to 0.16 eV with increasing As dose on n-Ge(001) while on p-Ge(001), the diodes exhibited increasing ÖB.

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