Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

2001 ◽  
Vol 90 (11) ◽  
pp. 5642-5646 ◽  
Author(s):  
M. G. Cheong ◽  
H. S. Yoon ◽  
R. J. Choi ◽  
C. S. Kim ◽  
S. W. Yu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Structural Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Interruption ◽  
Metalorganic Chemical

Properties of InGaN/GaN Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

2001 ◽  
Vol 672 ◽  
Author(s):  
M. G. Cheong ◽  
K. S. Kim ◽  
C. S. Kim ◽  
R. J. Choi ◽  
H. S. Yoon ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Misfit Strain ◽  
Peak Position ◽  
Transmission Microscopy ◽  
Growth Interruption ◽  
Metalorganic Chemical

ABSTRACTOptical and structural properties of InGaN/GaN quantum wells having growth interruption were investigated using high-resolution x-ray diffraction, photoluminescence and transmission microscopy. InxGa1−xN/GaN (x>0.25) six pair quantum wells used in this study were grown on c- plane sapphire by metalorganic chemical vapor deposition. The growth interruption was carried out by closing the group-III metal organic sources before and after growth of InGaN quantum well layers. With increasing the interruption time, the quantum dot-like region and well thickness decreases due to indium re-evaporation or thermal etching effect. As a result, PL peak position is blue-shifted and intensity is reduced. The size and number of V-defect did not vary with interruption time. The interruption time is not directly related with formation of the defect. The V-defect in quantum wells originates at threading dislocations and inversion domain boundaries due to higher misfit strain.

Structural properties of BaTiO3thin films on Si grown by metalorganic chemical vapor deposition

1993 ◽  
Vol 73 (3) ◽  
pp. 1547-1549 ◽  
Author(s):  
Y. S. Yoon ◽  
W. N. Kang ◽  
H. S. Shin ◽  
S. S. Yom ◽  
T. W. Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical
Sign in / Sign up

Export Citation Format

Share Document