Room-temperature-grown rare-earth-doped GaN luminescent thin films

2001 ◽  
Vol 79 (13) ◽  
pp. 1962-1964 ◽  
Author(s):  
D. S. Lee ◽  
A. J. Steckl
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Room Temperature ◽  
Rare Earth Doped

scholarly journals High Pressure X-ray Diffraction as a Tool for Designing Doped Ceria Thin Films Electrolytes

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 724
Author(s):  
Sara Massardo ◽  
Alessandro Cingolani ◽  
Cristina Artini
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Rare Earth ◽  
Ionic Conductivity ◽  
Bulk Material ◽  
Threshold Temperature ◽  
Doped Ceria ◽  
X Ray Diffraction ◽  
X Ray ◽  
Rare Earth Doped

Rare earth-doped ceria thin films are currently thoroughly studied to be used in miniaturized solid oxide cells, memristive devices and gas sensors. The employment in such different application fields derives from the most remarkable property of this material, namely ionic conductivity, occurring through the mobility of oxygen ions above a certain threshold temperature. This feature is in turn limited by the association of defects, which hinders the movement of ions through the lattice. In addition to these issues, ionic conductivity in thin films is dominated by the presence of the film/substrate interface, where a strain can arise as a consequence of lattice mismatch. A tensile strain, in particular, when not released through the occurrence of dislocations, enhances ionic conduction through the reduction of activation energy. Within this complex framework, high pressure X-ray diffraction investigations performed on the bulk material are of great help in estimating the bulk modulus of the material, and hence its compressibility, namely its tolerance toward the application of a compressive/tensile stress. In this review, an overview is given about the correlation between structure and transport properties in rare earth-doped ceria films, and the role of high pressure X-ray diffraction studies in the selection of the most proper compositions for the design of thin films.

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

2013 ◽  
Vol 710 ◽  
pp. 170-173
Author(s):  
Lian Ping Chen ◽  
Yuan Hong Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
Room Temperature ◽  
Electrochemical Techniques ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

scholarly journals Coherent magnon and acoustic phonon dynamics in tetragonal and rare-earth-doped BiFeO3multiferroic thin films

2013 ◽  
Vol 88 (9) ◽  
Author(s):  
K. I. Doig ◽  
F. Aguesse ◽  
A. K. Axelsson ◽  
N. M. Alford ◽  
S. Nawaz ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Acoustic Phonon ◽  
Phonon Dynamics ◽  
Rare Earth Doped

Pulsed laser deposition of rare-earth-doped gallium lanthanum sulphide chalcogenide glass thin films

2014 ◽  
Vol 117 (1) ◽  
pp. 197-205 ◽  
Author(s):  
O. G. Pompilian ◽  
G. Dascalu ◽  
I. Mihaila ◽  
S. Gurlui ◽  
M. Olivier ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Pulsed Laser Deposition ◽  
Chalcogenide Glass ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Gallium Lanthanum Sulphide ◽  
Rare Earth Doped

Rare earth-doped TiO2 nanocrystalline thin films: Preparation and thermal stability

2014 ◽  
Vol 34 (16) ◽  
pp. 4457-4462 ◽  
Author(s):  
Mario Borlaf ◽  
María T. Colomer ◽  
Rodrigo Moreno ◽  
Angel L. Ortiz
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Rare Earth ◽  
Doped Tio2 ◽  
Rare Earth Doped ◽  
Nanocrystalline Thin Films

scholarly journals Electrical and Ferroelectric Properties of Rare-earth-doped Na$_{0.5}$Bi$_{4.0}RE_{0.5}$Ti$_4$O$_{15}$ ($RE$ = Eu, Gd and Dy) Thin Films

2017 ◽  
Vol 67 (11) ◽  
pp. 1272-1278
Author(s):  
Min Hwan KWAK ◽  
Chinnambedu Murugesan RAGHAVAN ◽  
Sang Su KIM ◽  
Won-Jeong KIM*
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Ferroelectric Properties ◽  
O 15 ◽  
Rare Earth Doped

Rare earth-doped alumina thin films deposited by liquid source CVD processes

1998 ◽  
Vol 275-277 ◽  
pp. 742-745 ◽  
Author(s):  
J.L Deschanvres ◽  
W Meffre ◽  
J.C Joubert ◽  
J.P Senateur ◽  
F Robaut ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Liquid Source ◽  
Rare Earth Doped
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