Determination of traps in poly(p-phenylene vinylene) light emitting diodes by charge-based deep level transient spectroscopy

2001 ◽  
Vol 90 (8) ◽  
pp. 4196-4204 ◽  
Author(s):  
Olivier Gaudin ◽  
Richard B Jackman ◽  
Thien-Phap Nguyen ◽  
Philippe Le Rendu
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Light Emitting Diodes ◽  
Deep Level ◽  
Phenylene Vinylene ◽  
Light Emitting ◽  
Transient Spectroscopy

Determination of Traps in Poly(p-phenylene vinylene) Light Emitting Diodes by Chargebased Deep Level Transient Spectroscopy

2002 ◽  
Vol 725 ◽  
Author(s):  
Olivier Gaudin ◽  
Richard B. Jackman ◽  
Thien-Phap Nguyen ◽  
Philippe Le Rendu
Keyword(s):  
Cross Sections ◽  
Minority Carrier ◽  
Deep Level ◽  
Activation Energies ◽  
Phenylene Vinylene ◽  
Capture Cross ◽  
Light Emitting ◽  
Transient Spectroscopy ◽  
Capture Cross Sections

AbstractCharge-based deep level transient spectroscopy (Q-DLTS) has been used to study the defect states that exist within poly(p-phenylene vinylene) (PPV), a semiconducting polymer with a band gap of about 2.4 eV. The technique allows the determination of activation energies, capture cross-sections and trap concentrations. In some circumstances, it is also possible to distinguish between minority and majority carrier traps. The structures investigated here consisted of ITO/PPV/MgAg light emitting diode (LED) devices. Two types of trapping centres were found. The first type has activation energies in the range 0.49 – 0.53 eV and capture cross-sections of the order of 10-16 – 10-18 cm2. It shows a Poole-Frenkel, field assisted-emission process. This level has been identified as a bulk acceptor-like majority carrier (i.e., hole) trap. The second type has activation energies in the range 0.40 – 0.42 eV and capture cross-sections of the order of 10-19 cm2. This level has been identified as a minority carrier (i.e., electron) trap. This second trap type is therefore expected to limit minority carrier injection into the PPV layer within the LED, and hence reduce electroluminescence under forward bias conditions.

Bistable Defects Induced in GaAs by H2 Plasma Process

1989 ◽  
Vol 146 ◽  
Author(s):  
X. Boddaert ◽  
D. Vuillaume ◽  
D. Stievenard ◽  
J.C. Bourgoin ◽  
P. Boher
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Plasma Process ◽  
Stable States ◽  
Native Defects ◽  
Complete Determination ◽  
Lec Gaas ◽  
Transient Spectroscopy ◽  
Configuration Coordinate

ABSTRACTWe have studied the effect of an H2 plasma (150 W; 150°C; 10, 20, 50, 100 s) on unannealed and annealed (850°C, AsH3 atmosphere) LEC GaAs material. Using Deep Level Transient Spectroscopy, we have shown that the plasma induces a main bistable defect DO, which has two possible stable states Dl and D2. A complete determination of the corresponding Configuration Coordinate Diagram has been done. Finally, no correlation has been obtained between DO and the native defects EL6, EL3 and EL2. No passivation of the EL2 defect has been observed and the evolution of the D0 concentration results from the association of hydrogen with AsGa. These observations are in disagreement with the identification of EL2 with an isolated AsGa.

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