Selective-area atomic layer epitaxy growth of ZnO features on soft lithography-patterned substrates

2001 ◽  
Vol 79 (11) ◽  
pp. 1709-1711 ◽  
Author(s):  
M. Yan ◽  
Y. Koide ◽  
J. R. Babcock ◽  
P. R. Markworth ◽  
J. A. Belot ◽  
...  
1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1516-1520 ◽  
Author(s):  
Shingo Hirose ◽  
Akihiro Yoshida ◽  
Masaaki Yamaura ◽  
Kazuhiko Hara ◽  
Hiro Munekata

1990 ◽  
Vol 198 ◽  
Author(s):  
Akira Usui

ABSTRACTAtomic layer epitaxy(ALE) of III-V compound semiconductors is reviewed. This technology has grown in recent years because of potential applications to nanometer-order structures as well as to monolayer/cycle growth with high-uniformity in growth thickness, and to excellent selective-area growth. Recent developments in chloride ALE of various compounds and heterostructures are described. Potentials of ALE for producing such fine structures are shown.


1991 ◽  
Vol 107 (1-4) ◽  
pp. 129-135 ◽  
Author(s):  
N.H. Karam ◽  
V. Haven ◽  
S.M. Vernon ◽  
N. El-Masry ◽  
E.H. Lingunis ◽  
...  

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda

1989 ◽  
Vol 55 (3) ◽  
pp. 244-246 ◽  
Author(s):  
Weon G. Jeong ◽  
E. P. Menu ◽  
P. D. Dapkus

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