Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1−x/InP quantum-well solar cells

2001 ◽  
Vol 90 (6) ◽  
pp. 2840-2846 ◽  
Author(s):  
Robert J. Walters ◽  
G. P. Summers ◽  
S. R. Messenger ◽  
M. J. Romero ◽  
M. M. Al-Jassim ◽  
...  
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Quantum Well ◽  
Induced Current ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Study

Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis

2015 ◽  
Vol 118 (24) ◽  
pp. 245705 ◽  
Author(s):  
S. I. Maximenko ◽  
M. P. Lumb ◽  
R. Hoheisel ◽  
M. Gonzalez ◽  
D. A. Scheiman ◽  
...  
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Quantum Well ◽  
Radiation Response ◽  
Induced Current ◽  
Current Analysis ◽  
Electron Beam Induced Current ◽  
Multi Quantum Well

scholarly journals Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 736
Author(s):  
Wei Yi ◽  
Jun Chen ◽  
Takashi Sekiguchi
Keyword(s):  
Electron Beam ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Energy Levels ◽  
Induced Current ◽  
Temperature Dependent ◽  
Recombination Activity ◽  
Defect Energy ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Study

Electron-beam-induced current (EBIC) and cathodoluminescence (CL) have been applied to investigate the electrical and optical behaviors of dislocations in SrTiO3. The electrical recombination activity and defect energy levels of dislocations have been deduced from the temperature-dependent EBIC measurement. Dislocations contributed to resistive switching were clarified by bias-dependent EBIC. The distribution of oxygen vacancies around dislocations has been obtained by CL mapping. The correlation between switching, dislocation and oxygen vacancies was discussed.

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