Magnetic and conversion electron Mössbauer spectral study of amorphous thin films of DyxFe100−x and Dy20Fe80−yCoy

2001 ◽  
Vol 90 (4) ◽  
pp. 1934-1940 ◽  
Author(s):  
K. Fleury-Frenette ◽  
J. Delwiche ◽  
F. Grandjean ◽  
D. Vandormael ◽  
Gary J. Long
Keyword(s):  
Thin Films ◽  
Spectral Study ◽  
Conversion Electron ◽  
Amorphous Thin Films

A magnetic and conversion electron Mossbauer spectral study of amorphous Dy/sub 20/Fe/sub 80-y/-Co/sub y/ thin films

2001 ◽  
Vol 37 (4) ◽  
pp. 2311-2314
Author(s):  
K. Fleury-Frenette ◽  
J. Delwiche ◽  
F. Grandjean ◽  
D. Vandormael ◽  
D. Strivay ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectral Study ◽  
Conversion Electron

A conversion electron Mossbauer spectral study of Dy/sub 3/Fe/sub 5/O/sub 12/ thin films

2001 ◽  
Vol 37 (4) ◽  
pp. 2435-2437
Author(s):  
D. Vandormael ◽  
F. Grandjean ◽  
K. Fleury-Frenette ◽  
J. Delwiche
Keyword(s):  
Thin Films ◽  
Spectral Study ◽  
Conversion Electron

Irradiation Effect on Al-Dispersed Amorphous Silicon Thin Films by Femtosecond Laser

2020 ◽  
Vol 984 ◽  
pp. 91-96
Author(s):  
Cheng Liu ◽  
Yu Hao Song ◽  
Dong Yang Li ◽  
Wei Li
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Laser Raman Spectroscopy ◽  
Irradiation Effect ◽  
Amorphous Thin Films ◽  
Laser Raman ◽  
Silicon Thin Films ◽  
Al Nanoparticles ◽  
Spot Area ◽  
Fs Laser

The structural and optical properties of amorphous silicon (a-Si) and Al-dispersed amorphous silicon (a-Si:Al) thin films irradiated by femtosecond (fs) laser at various energy densities are investigated comparatively in this article. It is found that there is an uneven crystallization in both amorphous thin films by means of optical microscopy and laser Raman spectroscopy respectively. The crystallization in each pulse spot area is gradually weakened from the center to the edge along with the energy dispersion of laser irradiation. The laser induced crystallization in a-Si thin films begins early and develops more extensively compared to that in a-Si:Al thin films, and Al nanoparticles inhibit somehow the crystallization of a-Si in a-Si:Al thin films.

Pyroelectricity in Highly Stressed Quasi-Amorphous Thin Films

2003 ◽  
Vol 15 (21) ◽  
pp. 1826-1828 ◽  
Author(s):  
V. Lyahovitskaya ◽  
I. Zon ◽  
Y. Feldman ◽  
S.R. Cohen ◽  
A.K. Tagantsev ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Thin Films

Comparative study of electron- and photo-induced structural transformations on the surface of As35S65 amorphous thin films

2008 ◽  
Vol 516 (21) ◽  
pp. 7511-7518 ◽  
Author(s):  
A. Kovalskiy ◽  
J.R. Neilson ◽  
A.C. Miller ◽  
F.C. Miller ◽  
M. Vlcek ◽  
...  
Keyword(s):  
Thin Films ◽  
Comparative Study ◽  
Structural Transformations ◽  
Amorphous Thin Films

scholarly journals Origin of perpendicular magnetic anisotropy in amorphous thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Daniel Lordan ◽  
Guannan Wei ◽  
Paul McCloskey ◽  
Cian O’Mathuna ◽  
Ansar Masood
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Functional Materials ◽  
Spin Reorientation ◽  
Amorphous Films ◽  
Amorphous Thin Films ◽  
Magnetic Performance ◽  
Out Of Plane ◽  
Sputtering Pressure

AbstractThe emergence of perpendicular magnetic anisotropy (PMA) in amorphous thin films, which eventually transforms the magnetic spins form an in-plane to the out-of-plane configuration, also known as a spin-reorientation transition (SRT), is a fundamental roadblock to attain the high flux concentration advantage of these functional materials for broadband applications. The present work is focused on unfolding the origin of PMA in amorphous thin films deposited by magnetron sputtering. The amorphous films were deposited under a broad range of sputtering pressure (1.6–6.2 mTorr), and its effect on the thin film growth mechanisms was correlated to the static global magnetic behaviours, magnetic domain structure, and dynamic magnetic performance. The films deposited under low-pressure revealed a dominant in-plane uniaxial anisotropy along with an emerging, however feeble, perpendicular component, which eventually evolved as a dominant PMA when deposited under high-pressure sputtering. This change in the nature of anisotropy redefined the orientation of spins from in-plane to out-of-plane. The SRT in amorphous films was attributed to the dramatic change in the growth mechanism of disorder atomic structure from a homogeneously dispersed to a porous columnar microstructure. We suggest the origin of PMA is associated with the columnar growth of the amorphous films, which can be eluded by a careful selection of a deposition pressure regime to avoid its detrimental effect on the soft magnetic performance. To the author’s best knowledge, no such report links the sputtering pressure as a governing mechanism of perpendicular magnetisation in technologically important amorphous thin films.

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