Photoelectron spectroscopy study of the electronic structures of Al/MgF2/tris-(8-hydroxyquinoline) aluminum interfaces

2001 ◽  
Vol 79 (1) ◽  
pp. 105-107 ◽  
Author(s):  
Y. Park ◽  
J. Lee ◽  
S. K. Lee ◽  
D. Y. Kim
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electronic Structures ◽  
Spectroscopy Study

Photoelectron spectroscopy study of the electronic structures at CoPc/Bi(111) interface

2017 ◽  
Vol 661 ◽  
pp. 34-41 ◽  
Author(s):  
Haoliang Sun ◽  
Zhaofeng Liang ◽  
Kongchao Shen ◽  
Jinbang Hu ◽  
Gengwu Ji ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electronic Structures ◽  
Spectroscopy Study

Frontier electronic structures of Ru(tcterpy)(NCS)3 and Ru(dcbpy)2(NCS)2: A photoelectron spectroscopy study

2007 ◽  
Vol 126 (24) ◽  
pp. 244303 ◽  
Author(s):  
E. M. J. Johansson ◽  
M. Hedlund ◽  
M. Odelius ◽  
H. Siegbahn ◽  
H. Rensmo
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electronic Structures ◽  
Spectroscopy Study

Electronic Structures at Metal/Alumina Interfaces

1990 ◽  
Vol 193 ◽  
Author(s):  
M. Kohyama ◽  
S. Kose ◽  
M. Kinoshita ◽  
R. Yamamoto
Keyword(s):  
Electronic Structure ◽  
Chemical Bond ◽  
Photoelectron Spectroscopy ◽  
Electronic Structures ◽  
Local Density ◽  
Tight Binding ◽  
Theoretical Method ◽  
Local Density Of States ◽  
Spectroscopy Study ◽  
Metal Atoms

ABSTRACTThe electronic structure of the interface between α-Al2O3(0001) and Nb layers has been calculated using the empirical tight-binding method and the slab model. It has been shown that a direct chemical bond of both covalent and ionic characters can be established at the interface between the surface O atoms of α-Al2O3 and the Nb atoms, which is consistent with the recent photoelectron spectroscopy study. General trends of the electronic structure and chemical bond at the interfaces between α-Al2O3.(0001) and a series of 4d transition metals have been examined using the same theoretical method. In all cases, there exist similar interactions between the surface O atoms and the metal atoms, and it has been observed that the occupancy in the portion of the antibonding peaks of the local density of states at the interface increases as the atomic number of the transition metal increases.

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