scholarly journals Ionic and electronic dark decay of holograms in LiNbO3:Fe crystals

2001 ◽  
Vol 78 (26) ◽  
pp. 4076-4078 ◽  
Author(s):  
Yunping Yang ◽  
Ingo Nee ◽  
Karsten Buse ◽  
Demetri Psaltis
Keyword(s):  
Dark Decay

Theoretical analysis of the photocurrent dark decay in photorefractive media

2000 ◽  
Vol 36 (6) ◽  
pp. 692-697 ◽  
Author(s):  
P. Vaveliuk ◽  
B. Ruiz ◽  
R. Duchowicz ◽  
N. Bolognini
Keyword(s):  
Theoretical Analysis ◽  
Dark Decay

Effect of reaction temperature on the average crystallite size of SexTe1−x alloys

1986 ◽  
Vol 1 (2) ◽  
pp. 234-236 ◽  
Author(s):  
Santokh S. Badesha ◽  
George T. Fekete ◽  
Ihor Tarnawskyj
Keyword(s):  
Crystallite Size ◽  
Small Particle ◽  
Chemical Method ◽  
Average Crystallite Size ◽  
Organic Media ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrophotographic Properties ◽  
Dark Decay ◽  
Chalcogenide Materials

Electrophotographic properties of chalcogenide materials are readily influenced by altering their composition and/or structure. Dark decay and cycle down of photoreceptors utilizing small particle generators are both directly proportional to average crystallite size (ACS). This paper describes a novel chemical method to control the ACS of Se, Te, and Sex Te1−x alloys. These chalcogenide materials are prepared as powders by the reduction or coreduction of SeIV and/or TeIV intermediates with hydrazine, in organic media. To control the ACS of precipitated chalcogens the reaction is carried out at the desired temperature. X-ray diffraction measurements are used to determine the ACS, homogeneity, and phase of these precipitated powders.

Accurate Measurement of the Beta-Asymmetry in Neutron Decay Rules out Dark Decay Mode

2020 ◽  
Vol 14 (S1) ◽  
pp. S140-S143
Author(s):  
B. Märkisch ◽  
H. Abele ◽  
D. Dubbers ◽  
H. Saul ◽  
T. Soldner
Keyword(s):  
Decay Mode ◽  
Neutron Decay ◽  
Dark Decay

scholarly journals Dark side of the neutron?

2019 ◽  
Vol 219 ◽  
pp. 05005 ◽  
Author(s):  
Bartosz Fornal ◽  
Benjamín Grinstein
Keyword(s):  
Particle Physics ◽  
Decay Channel ◽  
Branching Fraction ◽  
Dark Side ◽  
Neutron Lifetime ◽  
Dark Sector ◽  
The Difference ◽  
Dark Decay ◽  
Theoretical Developments

We discuss our recently proposed interpretation of the discrepancy between the bottle and beam neutron lifetime experiments as a sign of a dark sector. The difference between the outcomes of the two types of measurements is explained by the existence of a neutron dark decay channel with a branching fraction 1%. Phenomenologically consistent particle physics models for the neutron dark decay can be constructed and they involve a strongly self-interacting dark sector. We elaborate on the theoretical developments around this idea and describe the efforts undertaken to verify it experimentally.

The Density of States in a-Si:C:H Revealed by Electrophotography

1993 ◽  
Vol 297 ◽  
Author(s):  
R.A.C.M.M. Van Swaaij ◽  
W.P.M. Willems ◽  
J. Bezemer ◽  
M.B. Von Der Linden ◽  
W.F. Van Der Weg
Keyword(s):  
Conduction Band ◽  
Density Of States ◽  
Carbon Concentration ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Temperature Dependent ◽  
Energy Position ◽  
A Value ◽  
Dark Decay ◽  
Bulk Space

Electrophotographic dark decay measurements have been used to determine the surface density of states (SDOS) of a-Si:C:H. Injection of trapped charge from these deep states into the conduction band governs the dark discharge of a photoconductor, provided bulk generation and bulk space charge are negligible. It is found that the SDOS profiles peak around 0.60 eV below the conduction band for materials with different carbon concentration. This observation implies that the energy position of these states is fixed with respect to the conduction band edge, even though the optical band gap of these materials increases with increasing carbon concentration. The nature of these states may be ascribed to D− states, whose density is strongly enhanced by filling D° states when the material is charged negatively. Furthermore, we observed that the SDOS around 0.60 eV below the conduction band edge is approximately the same for materials with up to 8 at.% carbon. From temperature dependent measurements a value of 2·108 s−1 was obtained for the attempt-to-escape frequency.

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