Defect generation in Cu(In,Ga)Se2 heterojunction solar cells by high-energy electron and proton irradiation

2001 ◽  
Vol 90 (2) ◽  
pp. 650-658 ◽  
Author(s):  
A. Jasenek ◽  
U. Rau
Keyword(s):  
Solar Cells ◽  
Proton Irradiation ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Heterojunction Solar Cells ◽  
Defect Generation

High-Energy Electron and Proton Irradiation of Cu(In,Ga)Se2 Heterojunction Solar Cells

2001 ◽  
Vol 668 ◽  
Author(s):  
A. Jasenek ◽  
A. Boden ◽  
K. Weinert ◽  
M. R. Balboul ◽  
H. W. Schock ◽  
...  
Keyword(s):  
Solar Cells ◽  
Proton Irradiation ◽  
High Efficiency ◽  
High Energy ◽  
Open Circuit ◽  
Solar Cell Efficiency ◽  
Heterojunction Solar Cells ◽  
Cell Efficiency ◽  
Radiation Induced ◽  
Induced Defects

ABSTRACTWe investigate radiation-induced defects in high-efficiency Cu(In,Ga)Se2/CdS/ZnO heterojunction solar cells after 1-MeV electron and 4-MeV proton irradiation. We use electron and proton fluences of more than 1018 cm−2 and up to 1014 cm−2, respectively. The irradiation experiments performed at three independent electron irradiation facilities consistently prove the superior radiation resistance of these Cu(In,Ga)Se2 devices compared to other types of solar cells. The reduction of the solar cell efficiency in all experiments is predominantly caused by a loss ΔVOC of the open circuit voltage VOC. An analytical model describes ΔVOC in terms of radiation-induced defects enhancing recombination in the Cu(In,Ga)Se2 absorber material. From our model we extract the defect introduction rates for recombination centers in Cu(In,Ga)Se2 for the respective particles and energies. Isochronal annealing steps fully recover VOC of the irradiated Cu(In,Ga)Se2 solar cells. Exposure to temperatures of approx. 400 K are sufficient to restore the initial VOC within less than 5 %, even after excessive irradiation. The annealing process displays an activation energy of EA = 1.1 eV. Admittance spectroscopy directly reveals the generation and the annealing of radiation-induced defects.

Illumination-induced recovery of Cu(In,Ga)Se2 solar cells after high-energy electron irradiation

2003 ◽  
Vol 82 (9) ◽  
pp. 1410-1412 ◽  
Author(s):  
A. Jasenek ◽  
U. Rau ◽  
K. Weinert ◽  
H. W. Schock ◽  
J. H. Werner
Keyword(s):  
Solar Cells ◽  
Electron Irradiation ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron

Kinematic Approximations in TED and RHEED Analysis of Reconstructed Surfaces

1990 ◽  
Vol 48 (2) ◽  
pp. 396-397
Author(s):  
L. -M. Peng ◽  
M. J. Whelan
Keyword(s):  
Electron Diffraction ◽  
Kinematic Analysis ◽  
Incident Beam ◽  
High Energy ◽  
Energy Electron ◽  
Great Success ◽  
High Energy Electron ◽  
Kinematic Approximation ◽  
Reconstructed Surfaces

In recent years there has been a trend in the structure determination of reconstructed surfaces to use high energy electron diffraction techniques, and to employ a kinematic approximation in analyzing the intensities of surface superlattice reflections. Experimentally this is motivated by the great success of the determination of the dimer adatom stacking fault (DAS) structure of the Si(111) 7 × 7 reconstructed surface.While in the case of transmission electron diffraction (TED) the validity of the kinematic approximation has been examined by using multislice calculations for Si and certain incident beam directions, far less has been done in the reflection high energy electron diffraction (RHEED) case. In this paper we aim to provide a thorough Bloch wave analysis of the various diffraction processes involved, and to set criteria on the validity for the kinematic analysis of the intensities of the surface superlattice reflections.The validity of the kinematic analysis, being common to both the TED and RHEED case, relies primarily on two underlying observations, namely (l)the surface superlattice scattering in the selvedge is kinematically dominating, and (2)the superlattice diffracted beams are uncoupled from the fundamental diffracted beams within the bulk.

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