Low-threshold optically pumped λ=4.4 μm vertical-cavity surface-emitting laser with a PbSe quantum-well active region

C. L. Felix; W. W. Bewley; I. Vurgaftman; J. R. Lindle; J. R. Meyer; H. Z. Wu; G. Xu; S. Khosravani; Z. Shi

doi:10.1063/1.1378808

Low-threshold optically pumped λ=4.4 μm vertical-cavity surface-emitting laser with a PbSe quantum-well active region

Applied Physics Letters ◽

10.1063/1.1378808 ◽

2001 ◽

Vol 78 (24) ◽

pp. 3770-3772 ◽

Cited By ~ 31

Author(s):

C. L. Felix ◽

W. W. Bewley ◽

I. Vurgaftman ◽

J. R. Lindle ◽

J. R. Meyer ◽

...

Keyword(s):

Active Region ◽

Quantum Well ◽

Cavity Surface ◽

Optically Pumped ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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Low-threshold optically pumped IV-VI quantum well vertical-cavity surface-emitting laser operating at /spl lambda/=4.45 /spl mu/m

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170) ◽

10.1109/cleo.2001.947604 ◽

2001 ◽

Author(s):

Z. Shi ◽

H.Z. Wu ◽

S. Khosravani ◽

G. Xu ◽

W.W. Bewley ◽

...

Keyword(s):

Quantum Well ◽

Cavity Surface ◽

Optically Pumped ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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Low-threshold continuous-wave operation of an oxide-confined vertical-cavity surface-emitting laser based on a quantum dot active region and half-wave cavity

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (C ◽

10.1109/leosst.1997.619092 ◽

2002 ◽

Author(s):

D.L. Huffaker ◽

L.A. Graham ◽

M.R. McDaniel ◽

D.G. Deppe

Keyword(s):

Active Region ◽

Quantum Dot ◽

Continuous Wave ◽

Cavity Surface ◽

Half Wave ◽

Continuous Wave Operation ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region

Optical and Quantum Electronics ◽

10.1007/s11082-006-0030-9 ◽

2006 ◽

Vol 38 (4-6) ◽

pp. 293-311 ◽

Cited By ~ 1

Author(s):

Robert P. Sarzała ◽

Włodzimierz Nakwaski

Keyword(s):

Active Region ◽

Quantum Well ◽

Laser Diode ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Vertical Cavity

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Low-threshold continuous-wave operation of an oxide-confined vertical cavity surface emitting laser based on a quantum dot active region and half-wave cavity

Electronics Letters ◽

10.1049/el:19970825 ◽

1997 ◽

Vol 33 (14) ◽

pp. 1225 ◽

Cited By ~ 18

Author(s):

D.L. Huffaker ◽

L.A. Graham ◽

D.G. Deppe

Keyword(s):

Active Region ◽

Quantum Dot ◽

Continuous Wave ◽

Cavity Surface ◽

Half Wave ◽

Continuous Wave Operation ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region

Applied Physics Letters ◽

10.1063/1.3030876 ◽

2008 ◽

Vol 93 (19) ◽

pp. 191118 ◽

Cited By ~ 9

Author(s):

Jiang-Yong Zhang ◽

Li-E Cai ◽

Bao-Ping Zhang ◽

Shui-Qing Li ◽

Feng Lin ◽

...

Keyword(s):

Active Region ◽

Quantum Well ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Low Threshold ◽

Emitting Lasers ◽

Coupled Quantum Well ◽

Vertical Cavity

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Dynamics of a low-threshold optically pumped organic vertical-cavity surface-emitting laser

Journal of Theoretical and Applied Physics ◽

10.1007/s40094-016-0209-9 ◽

2016 ◽

Vol 10 (2) ◽

pp. 123-127 ◽

Cited By ~ 2

Author(s):

Mohammad Reza Shayesteh ◽

Ghafar Darvish

Keyword(s):

Cavity Surface ◽

Optically Pumped ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

Chinese Physics B ◽

10.1088/1674-1056/20/9/094206 ◽

2011 ◽

Vol 20 (9) ◽

pp. 094206 ◽

Cited By ~ 3

Author(s):

Bao-Lu Guan ◽

Xiu-Juan Ren ◽

Chuan Li ◽

Shuo Li ◽

Guo-Zhu Shi ◽

...

Keyword(s):

Quantum Well ◽

High Power ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Strained Quantum Well ◽

Vertical Cavity

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InGaAs-GaAs Quantum Well Vertical-Cavity Surface-Emitting Laser Using Molecular Beam Epitaxial Regrowth

10.21236/ada238414 ◽

1991 ◽

Author(s):

C. Lei ◽

T. J. Rogers ◽

D. G. Deppe ◽

B. G. Streetman

Keyword(s):

Quantum Well ◽

Molecular Beam ◽

Cavity Surface ◽

Molecular Beam Epitaxial ◽

Epitaxial Regrowth ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Vertical Cavity

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A quasi-continuous wave, optically pumped violet vertical cavity surface emitting laser

Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088) ◽

10.1109/cleo.2000.906697 ◽

2000 ◽

Author(s):

Y.-K. Song ◽

H. Zhou ◽

M. Diagne ◽

A.V. Nurmikko ◽

R.P. Schneider ◽

...

Keyword(s):

Continuous Wave ◽

Cavity Surface ◽

Optically Pumped ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Vertical Cavity

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Low threshold current GaAs/InGaAs vertical-cavity surface-emitting laser grown at a constant temperature by molecular beam epitaxy

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616475 ◽

2002 ◽

Author(s):

C.Y. Li ◽

D.H. Zhang ◽

S.F. Yoon

Keyword(s):

Molecular Beam Epitaxy ◽

Constant Temperature ◽

Molecular Beam ◽

Threshold Current ◽

Cavity Surface ◽

Vertical Cavity Surface ◽

Surface Emitting Laser ◽

Low Threshold ◽

Vertical Cavity

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