Temperature dependence of optical and electronic properties of moderately doped silicon at terahertz frequencies

2001 ◽  
Vol 90 (2) ◽  
pp. 837-842 ◽  
Author(s):  
S. Nashima ◽  
O. Morikawa ◽  
K. Takata ◽  
M. Hangyo
Keyword(s):  
Temperature Dependence ◽  
Electronic Properties ◽  
Optical And Electronic Properties ◽  
Doped Silicon ◽  
Terahertz Frequencies

scholarly journals Optical and electronic properties of doped silicon from 0.1 to 2 THz

1990 ◽  
Vol 56 (17) ◽  
pp. 1694-1696 ◽  
Author(s):  
Martin van Exter ◽  
D. Grischkowsky
Keyword(s):  
Electronic Properties ◽  
Optical And Electronic Properties ◽  
Doped Silicon

Substrate Temperature Dependence of the Optical and Electronic Properties of Glow Discharge Produced a-Ge:H

1989 ◽  
Vol 149 ◽  
Author(s):  
Yuan- Min Li ◽  
Warren A. Turner ◽  
Choochon Lee ◽  
William Paul
Keyword(s):  
Glow Discharge ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Electronic Properties ◽  
Dark Conductivity ◽  
Index Of Refraction ◽  
Atmospheric Contamination ◽  
Optical And Electronic Properties ◽  
Substrate Temperatures ◽  
Post Deposition

ABSTRACTGlow discharge a-Ge:H films produced at substrate temperatures (Tδ) between 50°C and 350°C, with and without a top a-Si:H capping layer, have been studied. The uncapped samples produced at Tδ < 250°C suffer severe post-deposition atmospheric contamination, resulting in orders of magnitude of unstable increase in both the photoresponse and dark conductivity. The capped samples, which have very much reduced immediate post-deposition contamination, show only small increases in the efficiency-mobility-lifetime product (ŋμτ) with increasing Tδ. This contrasts with the results of earlier similar studies on uncapped samples, which showed a peak in either the photoconductivity1 or the ratio of photoconductivity to dark conductivity2 for 150°C < Tδ < 2000C. We have also observed a decrease in the bandgap, a narrowing of the band-tails, an increase in the index of refraction, and a reduction of hydrogen content of the films with increasing Tδ.

1,1’-Biaceanthrylene and 2,2'-Biaceanthrylene: Models for Linking Larger Polycyclic Aromatic Hydrocarbons via Five-Membered Rings

2019 ◽  
Author(s):  
Yachu Du ◽  
Kyle Plunkett
Keyword(s):  
Polycyclic Aromatic Hydrocarbons ◽  
Polycyclic Aromatic Hydrocarbon ◽  
Aromatic Hydrocarbon ◽  
Electronic Properties ◽  
Aromatic Hydrocarbons ◽  
Model Systems ◽  
Redox Potentials ◽  
Dimer Model ◽  
Optical And Electronic Properties ◽  
Polycyclic Aromatic

We show that polycyclic aromatic hydrocarbon (PAH) chromophores that are linked between two five-membered rings can access planarized structures with reduced optical gaps and redox potentials. Two aceanthrylene chromophores were connected into dimer model systems with the chromophores either projected outward (2,2’-biaceanthrylene) or inward (1,1’-biaceanthrylene) and the optical and electronic properties were compared. Only the planar 2,2’-biaceanthrylene system showed significant reductions of the optical gaps (1 eV) and redox potentials in relation to the aceanthrylene monomer.<br>

1,1’-Biaceanthrylene and 2,2'-Biaceanthrylene: Models for Linking Larger Polycyclic Aromatic Hydrocarbons via Five-Membered Rings

2019 ◽  
Author(s):  
Yachu Du ◽  
Kyle Plunkett
Keyword(s):  
Polycyclic Aromatic Hydrocarbons ◽  
Polycyclic Aromatic Hydrocarbon ◽  
Aromatic Hydrocarbon ◽  
Electronic Properties ◽  
Aromatic Hydrocarbons ◽  
Model Systems ◽  
Redox Potentials ◽  
Dimer Model ◽  
Optical And Electronic Properties ◽  
Polycyclic Aromatic

We show that polycyclic aromatic hydrocarbon (PAH) chromophores that are linked between two five-membered rings can access planarized structures with reduced optical gaps and redox potentials. Two aceanthrylene chromophores were connected into dimer model systems with the chromophores either projected outward (2,2’-biaceanthrylene) or inward (1,1’-biaceanthrylene) and the optical and electronic properties were compared. Only the planar 2,2’-biaceanthrylene system showed significant reductions of the optical gaps (1 eV) and redox potentials in relation to the aceanthrylene monomer.<br>

scholarly journals Defect Processes in Halogen Doped SnO2

2021 ◽  
Vol 11 (2) ◽  
pp. 551
Author(s):  
Petros-Panagis Filippatos ◽  
Nikolaos Kelaidis ◽  
Maria Vasilopoulou ◽  
Dimitris Davazoglou ◽  
Alexander Chroneos
Keyword(s):  
Electronic Properties ◽  
Tin Oxide ◽  
Density Functional ◽  
Structural Changes ◽  
High Dielectric Constant ◽  
Density Functional Theory Calculations ◽  
Functional Theory ◽  
Optical And Electronic Properties ◽  
High Dielectric ◽  
Gap States

In the present study, we performed density functional theory calculations (DFT) to investigate structural changes and their impact on the electronic properties in halogen (F, Cl, Br, and I) doped tin oxide (SnO2). We performed calculations for atoms intercalated either at interstitial or substitutional positions and then calculated the electronic structure and the optical properties of the doped SnO2. In all cases, a reduction in the bandgap value was evident, while gap states were also formed. Furthermore, when we insert these dopants in interstitial and substitutional positions, they all constitute a single acceptor and donor, respectively. This can also be seen in the density of states through the formation of gap states just above the valence band or below the conduction band, respectively. These gap states may contribute to significant changes in the optical and electronic properties of SnO2, thus affecting the metal oxide’s suitability for photovoltaics and photocatalytic devices. In particular, we found that iodine (I) doping of SnO2 induces a high dielectric constant while also reducing the oxide’s bandgap, making it more efficient for light-harvesting applications.

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