A radiation transport coupled particle-in-cell simulation. II. Simulation results in a one-dimensional planar model

2001 ◽  
Vol 8 (6) ◽  
pp. 3089-3095 ◽  
Author(s):  
Hae June Lee ◽  
J. P. Verboncoeur
2021 ◽  
Vol 28 (12) ◽  
pp. 123507
Author(s):  
T. Gyergyek ◽  
S. Costea ◽  
K. Bajt ◽  
A. Valič ◽  
J. Kovačič

2014 ◽  
Vol 1 (2) ◽  
pp. 1657-1671
Author(s):  
J. Guo ◽  
B. Yu

Abstract. We studied the evolutions of double layers which appear after the magnetic reconnection through two-dimensional electromagnetic particle-in-cell simulation. The simulation results show that the double layers are formed in the plasma sheet boundary layer after magnetic reconnection. At first, the double layers which have unipolar structures are formed. And then the double layers turn into bipolar structures, which will couple with another new weak bipolar structure. Thus a new double layer or tripolar structure comes into being. The double layers found in our work are about several ten Debye lengths, which accords with the observation results. It is suggested that the electron beam formed during the magnetic reconnection is responsible for the production of the double layers.


2021 ◽  
Vol 71 (03) ◽  
pp. 309-314
Author(s):  
Arjun Kumar ◽  
Prabhakar Tripathi ◽  
Smrity Dwivedi ◽  
P. K. Jain

In this paper, a bi-frequency magnetically insulated line oscillator (MILO) was proposed and designed. The bi-frequency MILO proposed has two axially partitioned slow-wave interaction structures (SWS) and the second SWS is dielectric-loaded to create the frequency shift in the resonant frequency. The conventional MILO device design methodology was followed along with two SWSs separated by a segregation cavity. The dispersion relation of the dielectric-loaded SWS was calculated using an equivalent circuit approach. Furthermore, the cold analysis was carried out to find the energy stored in the different SWSs to validate the device oscillation frequency. The beam wave interaction behaviour and device RF output performance were investigated through 3D PIC (Particle-in-cell) simulation for typical diode voltage of 550 kV, and current 48 kA, respectively. Simulation results illustrate that the proposed MILO generates RF peak power of ~3.5 GW at frequencies 3.62 GHz and 3.72 GHz. The conversion efficiency of the device was ~13.25%.


2005 ◽  
Vol 12 (5) ◽  
pp. 052317 ◽  
Author(s):  
Albert Meige ◽  
Rod W. Boswell ◽  
Christine Charles ◽  
Miles M. Turner

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