Quantum Monte Carlo characterization of small Cu-doped silicon clusters: CuSi4 and CuSi6

2001 ◽  
Vol 114 (20) ◽  
pp. 9028-9032 ◽  
Author(s):  
I. V. Ovcharenko ◽  
W. A. Lester ◽  
C. Xiao ◽  
F. Hagelberg
Keyword(s):  
Monte Carlo ◽  
Quantum Monte Carlo ◽  
Silicon Clusters ◽  
Doped Silicon

scholarly journals Quantum Monte Carlo Study of Electron Correlation in Chromium-Doped Silicon Cluster Cr@Si12

2006 ◽  
Vol 47 (11) ◽  
pp. 2617-2619 ◽  
Author(s):  
Kenta Hongo ◽  
Vijay Kumar ◽  
Yoshiyuki Kawazoe ◽  
Hiroshi Yasuhara
Keyword(s):  
Monte Carlo ◽  
Electron Correlation ◽  
Quantum Monte Carlo ◽  
Monte Carlo Study ◽  
Silicon Cluster ◽  
Doped Silicon

Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks

2017 ◽  
Vol 13 (12) ◽  
pp. 6061-6067 ◽  
Author(s):  
R. Derian ◽  
K. Tokár ◽  
B. Somogyi ◽  
Á. Gali ◽  
I. Štich
Keyword(s):  
Monte Carlo ◽  
Quantum Monte Carlo ◽  
Silicon Nanocrystals ◽  
Doped Silicon ◽  
Heavily Doped

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

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