Monomode optical waveguide in lithium niobate formed by MeV Si+ ion implantation

2001 ◽  
Vol 89 (9) ◽  
pp. 5224-5226 ◽  
Author(s):  
Hui Hu ◽  
Fei Lu ◽  
Feng Chen ◽  
Bo-Rong Shi ◽  
Ke-Ming Wang ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Ion Implantation ◽  
Optical Waveguide ◽  
Si Ion Implantation

Formation of planar optical waveguide by multi energy Si ion implantation into Nd:YVO4 crystal

2007 ◽  
Vol 201 (9-11) ◽  
pp. 5427-5430 ◽  
Author(s):  
Gang Fu ◽  
Ke-Ming Wang ◽  
Xue-Lin Wang ◽  
Fei Lu ◽  
Qing-Ming Lu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Waveguide ◽  
Planar Optical Waveguide ◽  
Si Ion Implantation

Low-dose Si ion implantation into semi-insulating LEC GaAs

1981 ◽  
Vol 17 (21) ◽  
pp. 817 ◽  
Author(s):  
H. Yamazaki ◽  
T. Honda ◽  
S. Miyazawa
Keyword(s):  
Ion Implantation ◽  
Low Dose ◽  
Lec Gaas ◽  
Si Ion Implantation

scholarly journals Design of a Broadband and Low Loss TM Magneto-Optical Waveguide Isolator Based on Lithium Niobate on Insulator

2021 ◽  
pp. 1-1
Author(s):  
Mingxuan Li ◽  
Yiru Zhao ◽  
Shuangxing Dai ◽  
Wenqi Yu ◽  
Jinye Li ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Optical Waveguide ◽  
Low Loss

Er+ medium energy ion implantation into lithium niobate

2009 ◽  
Vol 267 (8-9) ◽  
pp. 1332-1335 ◽  
Author(s):  
B. Svecova ◽  
P. Nekvindova ◽  
A. Mackova ◽  
J. Oswald ◽  
J. Vacik ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Ion Implantation ◽  
Medium Energy

Highly uniform E/D MESFETs by Si ion-implantation and methane/hydrogen plasma gate recessing

1991 ◽  
Vol 6 (9) ◽  
pp. 912-915 ◽  
Author(s):  
G Zou ◽  
R Pereira ◽  
M de Potter ◽  
M Van Hove ◽  
W De Raedt ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Hydrogen Plasma ◽  
Highly Uniform ◽  
Si Ion Implantation

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

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