Biquadratic coupling effect on magnetoresistance response curves of spin valves with a synthetic antiferromagnet

2001 ◽  
Vol 89 (11) ◽  
pp. 6814-6816 ◽  
Author(s):  
K. Zhang ◽  
T. Kai ◽  
T. Zhao ◽  
H. Fujiwara ◽  
G. J. Mankey
Keyword(s):  
Coupling Effect ◽  
Spin Valves ◽  
Response Curves ◽  
Synthetic Antiferromagnet

Thermal stability of synthetic antiferromagnet and hard magnet coupled spin valves

2008 ◽  
Vol 26 (4) ◽  
pp. 735-738 ◽  
Author(s):  
Zeenath R. Tadisina ◽  
Subhadra Gupta ◽  
Patrick LeClair ◽  
Tim Mewes
Keyword(s):  
Thermal Stability ◽  
Spin Valves ◽  
Synthetic Antiferromagnet ◽  
Hard Magnet ◽  
Thermal Stability Of

MAGNETORESISTANCE IN NANO-SCALE NiO-CONTAINING Co/Cu/Co SPIN VALVES

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2574-2579 ◽  
Author(s):  
A. M. ZHANG ◽  
X. S. WU ◽  
L. SUN ◽  
A. HU
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Growth Parameters ◽  
Coupling Effect ◽  
Spin Valve ◽  
Interface Roughness ◽  
Spin Valves ◽  
X Ray ◽  
X Ray Scattering

A series of NiO -containing Co/Cu/Co spin valves with the thickness Co of 5 nm and Cu of 2 nm were fabricated by magnetron sputtering technique with different growth parameters. NiO layer with the thickness of 40 nm is used as a coupling layer. Magnetoresistance (MR) of the spin valve with NiO layer under the bottom of Co/Cu/Co (BSV) is larger than that of the spin valve with NiO layer at the top of Co/Cu/Co (TSV) at room temperature. The MR values can be improved with decreasing the sputtering rate of copper layer. The studies by in-situ grazing incident X-ray scattering on the annealing temperature dependence of MR show that the decrease of the interface roughness between Co and NiO may increase the MR value, while the decrease of the coupling effect between NiO and Co decreases the MR value.

Spin-flop states in a synthetic antiferromagnet and variations of unidirectional anisotropy in FeMn-based spin valves

2016 ◽  
Vol 117 (12) ◽  
pp. 1179-1184 ◽  
Author(s):  
M. A. Milyaev ◽  
L. I. Naumova ◽  
T. A. Chernyshova ◽  
V. V. Proglyado ◽  
N. A. Kulesh ◽  
...  
Keyword(s):  
Spin Valves ◽  
Synthetic Antiferromagnet ◽  
Unidirectional Anisotropy

Influence of Synthetic Antiferromagnet Free Layer on Current-Perpendicular-to-Plane Spin-Valves

2004 ◽  
Vol 40 (4) ◽  
pp. 2245-2247 ◽  
Author(s):  
Y. Jiang ◽  
S. Abe ◽  
T. Nozaki ◽  
N. Tezuka ◽  
K. Inomata
Keyword(s):  
Spin Valves ◽  
Free Layer ◽  
Synthetic Antiferromagnet ◽  
Current Perpendicular To Plane

Fundamental characteristics of an approximate correction method for electromagnetic coupling in frequency‐domain induced polarization

Geophysics ◽  
1985 ◽  
Vol 50 (2) ◽  
pp. 235-241 ◽  
Author(s):  
J. Wang ◽  
K. Zhan ◽  
L. Shien ◽  
L. Yan
Keyword(s):  
Coupling Effect ◽  
Theoretical Calculations ◽  
Electromagnetic Coupling ◽  
Surface Current ◽  
Correction Method ◽  
Induced Polarization ◽  
Response Curves ◽  
Surface Current Density ◽  
Model Studies ◽  
Bona Fide

Our studies have determined that both gradient and dipole‐dipole arrays may produce a rather strong electromagnetic (EM) coupling effect under certain conditions. Variations in these apparent effects are closely correlated with changes of surface current density and also influenced by topographic relief. The dipole‐dipole array can provide EM coupling anomalies with the same sign and shape as bona fide induced‐polarization (IP) anomalies. It has been shown by theoretical calculations and model studies that response curves of frequency effects of EM coupling in logarithmic coordinates have distinctive features of sectional linearization. This can provide a basic method to correct approximately EM coupling. Compared with methods being used inside and outside China, the suggested correction method has the advantage of wide application. This has been already proven by a few field examples.

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