scholarly journals Modeling of electronic transport in scanning tunneling microscope tip–carbon nanotube systems

2001 ◽  
Vol 78 (12) ◽  
pp. 1739-1741 ◽  
Author(s):  
Toshishige Yamada
Keyword(s):  
Carbon Nanotube ◽  
Electronic Transport ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Tunneling Microscope

High-yield synthesis of conductive carbon nanotube tips for multiprobe scanning tunneling microscope

2007 ◽  
Vol 78 (1) ◽  
pp. 013703 ◽  
Author(s):  
H. Konishi ◽  
Y. Murata ◽  
W. Wongwiriyapan ◽  
M. Kishida ◽  
K. Tomita ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Scanning Tunneling Microscope ◽  
High Yield ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Dual-probe scanning tunneling microscope: Measuring a carbon nanotube ring transistor

2001 ◽  
Vol 78 (19) ◽  
pp. 2928-2930 ◽  
Author(s):  
Hiroyuki Watanabe ◽  
Chikara Manabe ◽  
Taishi Shigematsu ◽  
Masaaki Shimizu
Keyword(s):  
Carbon Nanotube ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Dual Probe

Metal-Coated Carbon Nanotube Tip for Scanning Tunneling Microscope

2004 ◽  
Vol 43 (No. 5A) ◽  
pp. L644-L646 ◽  
Author(s):  
Takashi Ikuno ◽  
Mitsuhiro Katayama ◽  
Masaru Kishida ◽  
Kazunori Kamada ◽  
Yuya Murata ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Coated Carbon

scholarly journals Selective Excitations of Transverse Vibrational Modes of a Carbon Nanotube through a “Shuttle-Like” Electromechanical Instability

2010 ◽  
Vol 2010 ◽  
pp. 1-5
Author(s):  
F. Santandrea
Keyword(s):  
Carbon Nanotube ◽  
Scanning Tunneling Microscope ◽  
Electron Tunneling ◽  
Selective Excitation ◽  
Scanning Tunneling ◽  
Vibrational Modes ◽  
Tunneling Microscope ◽  
Electromechanical Instability ◽  
Nano Electromechanical System ◽  
Transverse Oscillations

We study the dynamics of transverse oscillations of a suspended carbon nanotube into which electron current is injected from the tip of a scanning tunneling microscope (STM). In this case the correlations between the displacement of the nanotube and its charge state, determined by the position-dependent electron tunneling rate, can lead to a “shuttle-like” instability for the transverse vibrational modes. We find that selective excitation of a specific mode can be achieved by an accurate positioning of the STM tip. This result suggests a feasible way to control the dynamics of this nano-electromechanical system (NEMS) based on the “shuttle instability.”

scholarly journals Single-electron transport through stabilised silicon nanocrystals

Nanoscale ◽  
2018 ◽  
Vol 10 (29) ◽  
pp. 13949-13958 ◽  
Author(s):  
Tuhin Shuvra Basu ◽  
Simon Diesch ◽  
Elke Scheer
Keyword(s):  
Electron Transport ◽  
Electronic Transport ◽  
Single Particle ◽  
Scanning Tunneling Microscope ◽  
Silicon Nanocrystals ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Transport Measurement ◽  
Single Electron Transport ◽  
Particle Level

The electronic transport measurement of luminescent silicon nanocrystals at the single particle level by using a cryogenic scanning tunneling microscope (300 mK).

Carbon Nanotube Tip for Scanning Tunneling Microscope

2001 ◽  
Vol 40 (Part 1, No. 6B) ◽  
pp. 4328-4330 ◽  
Author(s):  
Wataru Mizutani ◽  
Nami Choi ◽  
Takayuki Uchihashi ◽  
Hiroshi Tokumoto
Keyword(s):  
Carbon Nanotube ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Tunneling Microscope

Dual-probe scanning tunneling microscope and a carbon nanotube ring transistor

2002 ◽  
Vol 738 ◽  
Author(s):  
Taishi Shigematsu ◽  
Hiroyuki Watanabe ◽  
Chikara Manabe ◽  
Kei Shimotani ◽  
Masaaki Shimizu
Keyword(s):  
Carbon Nanotube ◽  
Scanning Tunneling Microscope ◽  
Switching Behavior ◽  
Hole Injection ◽  
Scanning Tunneling ◽  
Gate Bias ◽  
Molecular Device ◽  
Tunneling Microscope ◽  
Dual Probe

ABSTRACTFor measuring molecular device, we developed a dual-probe scanning tunneling microscope (D-STM) composed of two STM systems in which a carbon nanotube (NT) was used for STM tip. Using D-STM, we fabricated a NT ring device. The NT ring device showed a switching behavior with applying gate bias. Furthermore, in STM imaging for various gate biases, we could observe directly hole injection into the NT ring.

Fabrication of Nanostructures of Low-Resistivity Silicon Wafer with High-Aspect-Ratio Using Carbon Nanotube Probe of Scanning Tunneling Microscope

2013 ◽  
Vol 1527 ◽  
Author(s):  
Akihito Matsumuro ◽  
Makoto Takagi
Keyword(s):  
Carbon Nanotube ◽  
Aspect Ratio ◽  
Silicon Wafer ◽  
Bias Voltage ◽  
High Aspect Ratio ◽  
Scanning Tunneling Microscope ◽  
Scanning Tunneling ◽  
Formation Mechanisms ◽  
Tunneling Microscope ◽  
Low Resistivity

ABSTRACTVarious nanostructures with high-aspect-ratio formed in a low-resistivity silicon wafer by the nano-processing using a carbon nanotube (CNT) probe of a scanning tunneling microscope (STM) have been investigated. The multi-wall CNT probes were obtained with our original pulling-method from CNT dispersion liquid. Nanostructures of point configurations (pit and mound) and line configurations were obtained at the constant tunneling current of 0.1 nA by controlling the bias voltages up to 10 V, processing times up to 300 s and scanning speeds of probe up to 480 nm/s for a line configuration. The aspect-ratio of the pit configuration fabricated at the bias voltage of 3 V increased about 6 times in proportion to the increase in processing time. Remarkable influence of the bias voltage on the configurations indicated that there exists a threshold bias voltage for the transition from the pit configuration to the mound one between 3 V and 5 V, and the aspect ratio of all nanostructures fabricated by the CNT probe were larger than those by a conventional tungsten probe. Finally, cross-sectional TEM observations were also applied to clarify the difference in the formation mechanisms between the pit configuration and the mound configuration. The TEM image of the pit configuration showed neither dislocations nor remarkable strains existed, but in the case of the mound shape TEM analysis indicated the existence of single crystalline silicon region solidified with atomic defects under the mound configuration. Therefore the drastic change of the configurations was attributed to the changes of the atomic-scale microstructures by applying the bias voltages.

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