Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region

2001 ◽  
Vol 89 (8) ◽  
pp. 4558-4563 ◽  
Author(s):  
Zhonghui Chen ◽  
O. Baklenov ◽  
E. T. Kim ◽  
I. Mukhametzhanov ◽  
J. Tie ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Dot ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors

Increased normal incidence photocurrent in quantum dot infrared photodetectors

2012 ◽  
Vol 101 (24) ◽  
pp. 241114 ◽  
Author(s):  
Jiayi Shao ◽  
Thomas E. Vandervelde ◽  
Ajit Barve ◽  
Andreas Stintz ◽  
Sanjay Krishna
Keyword(s):  
Quantum Dot ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors

Quantum Dot Long-Wavelength Detectors

2001 ◽  
Vol 692 ◽  
Author(s):  
Pallab Bhattacharya ◽  
Adrienne D. Stiff-Roberts ◽  
Sanjay Krishna ◽  
Steve Kennerly
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Elevated Temperatures ◽  
Infrared Imaging ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Dot Infrared Photodetectors ◽  
Dark Currents ◽  
Long Wavelength Infrared

AbstractLong-wavelength infrared detectors operating at elevated temperatures are critical for imaging applications. InAs/GaAs quantum dots are an important material for the design and fabrication of high-temperature infrared photodetectors. Quantum dot infrared photodetectors allow normal-incidence operation, in addition to low dark currents and multispectral response. The long intersubband relaxation time of electrons in quantum dots improves the responsivity of the detectors, contributing to better hightemperature performance. We have obtained extremely low dark currents (Idark = 1.7 pA, T = 100 K, Vbias = 0.1 V), high detectivities (D* = 2.9×108cmHz1/2/W, T = 100 K, Vbias = 0.2 V), and high operating temperatures (T = 150 K) for these quantum-dot detectors. These results, as well as infrared imaging with QDIPs, will be described and discussed.

Effects of Si doping on normal incidence InAs∕In0.15Ga0.85As dots-in-well quantum dot infrared photodetectors

2006 ◽  
Vol 99 (8) ◽  
pp. 083105 ◽  
Author(s):  
R. S. Attaluri ◽  
S. Annamalai ◽  
K. T. Posani ◽  
A. Stintz ◽  
S. Krishna
Keyword(s):  
Quantum Dot ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Si Doping ◽  
Quantum Dot Infrared Photodetectors

scholarly journals Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors

2002 ◽  
Vol 80 (18) ◽  
pp. 3265-3267 ◽  
Author(s):  
A. D. Stiff-Roberts ◽  
S. Chakrabarti ◽  
S. Pradhan ◽  
B. Kochman ◽  
P. Bhattacharya
Keyword(s):  
Quantum Dot ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors ◽  
Raster Scan ◽  
Gaas Quantum Dot

InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region

2001 ◽  
Vol 42 (3-5) ◽  
pp. 479-484 ◽  
Author(s):  
Z.H Chen ◽  
O Baklenov ◽  
E.T Kim ◽  
I Mukhametzhanov ◽  
J Tie ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors

Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity

2002 ◽  
Vol 38 (9) ◽  
pp. 1234-1237 ◽  
Author(s):  
Zhengmao Ye ◽  
J.C. Campbell ◽  
Zhonghui Chen ◽  
Eui-Tae Kim ◽  
A. Madhukar
Keyword(s):  
Quantum Dot ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors ◽  
Self Assembled
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