Quantum-mechanical effects on low energy electron–ion Coulomb bremsstrahlung in dense high-temperature plasmas

2001 ◽  
Vol 8 (3) ◽  
pp. 1037-1039
Author(s):  
Young-Dae Jung
Keyword(s):  
High Temperature ◽  
Low Energy ◽  
Energy Electron ◽  
Quantum Mechanical ◽  
Mechanical Effects ◽  
Low Energy Electron ◽  
Quantum Mechanical Effects

A Study of the DII Defect after Electron Irradiation and Annealing of 4H SiC

2007 ◽  
Vol 556-557 ◽  
pp. 319-322 ◽  
Author(s):  
W. Sullivan ◽  
John W. Steeds
Keyword(s):  
High Temperature ◽  
Electron Irradiation ◽  
Low Energy ◽  
Energy Electron ◽  
Vibrational Modes ◽  
Electron Dose ◽  
Low Energy Electron ◽  
Local Vibrational Modes ◽  
First Time ◽  
Dose Variation

The high-temperature persistent PL defect known as DII is commented on within this study, seen for the first time in low-energy electron irradiated 4H SiC. The local vibrational modes associated with the defect have been identified and the temperature dependence, spatial variation and electron-energy/electron-dose variation of this defect have all been investigated.

Performance Evaluation of a Novel Type of Low-Energy Electron Microscope

1990 ◽  
Vol 48 (1) ◽  
pp. 354-355
Author(s):  
Bertholdand Senftinger ◽  
Helmut Liebl
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Field Strength ◽  
Numerical Aperture ◽  
Low Energy ◽  
Energy Electron ◽  
High Resolution Imaging ◽  
Lens System ◽  
Resolution Imaging ◽  
Low Energy Electron

During the last few years the investigation of clean and adsorbate-covered solid surfaces as well as thin-film growth and molecular dynamics have given rise to a constant demand for high-resolution imaging microscopy with reflected and diffracted low energy electrons as well as photo-electrons. A recent successful implementation of a UHV low-energy electron microscope by Bauer and Telieps encouraged us to construct such a low energy electron microscope (LEEM) for high-resolution imaging incorporating several novel design features, which is described more detailed elsewhere.The constraint of high field strength at the surface required to keep the aberrations caused by the accelerating field small and high UV photon intensity to get an improved signal-to-noise ratio for photoemission led to the design of a tetrode emission lens system capable of also focusing the UV light at the surface through an integrated Schwarzschild-type objective. Fig. 1 shows an axial section of the emission lens in the LEEM with sample (28) and part of the sample holder (29). The integrated mirror objective (50a, 50b) is used for visual in situ microscopic observation of the sample as well as for UV illumination. The electron optical components and the sample with accelerating field followed by an einzel lens form a tetrode system. In order to keep the field strength high, the sample is separated from the first element of the einzel lens by only 1.6 mm. With a numerical aperture of 0.5 for the Schwarzschild objective the orifice in the first element of the einzel lens has to be about 3.0 mm in diameter. Considering the much smaller distance to the sample one can expect intense distortions of the accelerating field in front of the sample. Because the achievable lateral resolution depends mainly on the quality of the first imaging step, careful investigation of the aberrations caused by the emission lens system had to be done in order to avoid sacrificing high lateral resolution for larger numerical aperture.

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