A new determination method of absolute adsorption isotherm of supercritical gases under high pressure with a special relevance to density-functional theory study

2001 ◽  
Vol 114 (9) ◽  
pp. 4196-4205 ◽  
Author(s):  
Katsuyuki Murata ◽  
Mustapha El-Merraoui ◽  
Katsumi Kaneko
2013 ◽  
Vol 27 (18) ◽  
pp. 1350086
Author(s):  
HUXIAN ZHAO ◽  
XIAOSHUANG CHEN ◽  
JIANPING LU ◽  
WEI LU

We present the results of a density functional theory study of high-pressure structures of HgTe up to bcc structure, which is the highest-pressure structure that has been fully characterized in experiments in the compounds. We investigated the different structures of HgTe and studied the semimetal → semiconductor → conductor transition in detail. We found, in the mechanism for the semimetal → semiconductor transition, the local structure plays a very important role. Change in local structure leads to the change in hybridization of bonding, sp3 →sp3d2 and led to the change from semiconductor to conductor. In addition, we focused on the special transition of semimetal → semiconductor. The tiny change of bond angle reduces the p–d repulsion interaction in the compound and a band gap is open up, which indicates the semiconductor property.


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