Atomic ordering in the LaFe0.5Mn0.5O3 solid solution film

2001 ◽  
Vol 78 (4) ◽  
pp. 512-514 ◽  
Author(s):  
K. Ueda ◽  
Y. Muraoka ◽  
H. Tabata ◽  
T. Kawai
Keyword(s):  
Solid Solution ◽  
Atomic Ordering ◽  
Solid Solution Film

Designing room-temperature multiferroic materials in a single-phase solid-solution film

2016 ◽  
Vol 49 (36) ◽  
pp. 365001 ◽  
Author(s):  
H J Mao ◽  
C Song ◽  
B Cui ◽  
J J Peng ◽  
F Li ◽  
...  
Keyword(s):  
Solid Solution ◽  
Room Temperature ◽  
Single Phase ◽  
Multiferroic Materials ◽  
Solid Solution Film

scholarly journals A Brief Review on the Ferroelectric Fluorite-Structured Nanolaminate

2021 ◽  
Vol 59 (12) ◽  
pp. 849-856
Author(s):  
Kun Yang ◽  
Ju Yong Park ◽  
Dong Hyun Lee ◽  
Se Hyun Kim ◽  
Geun Hyeong Park ◽  
...  
Keyword(s):  
Solid Solution ◽  
Physical Properties ◽  
Remanent Polarization ◽  
Solid Solution Film

Ferroelectricity can be induced in fluorite-structured oxides such as HfO2 and ZrO2, a feature of increasing interest in both academia and industry. Initially, most research focused on solid solution films, but recently, it has been suggested that nanolaminates with independent HfO2 and ZrO2 layers may show electrical and physical properties superior to those of solid solution samples. It was reported that the nanolaminate samples could have remanent polarization higher than that of solid solution film or a wider composition window for robust ferroelectricity compared to the solid solution films. In this review, the existing literature on fluorite-structured nanolaminates is comprehensively reviewed.

Photoelectrochemical properties of sol–gel-derived Ti1−xVxO2 solid solution film photoelectrodes

2002 ◽  
Vol 410 (1-2) ◽  
pp. 14-20 ◽  
Author(s):  
Gaoling Zhao ◽  
Gaorong Han ◽  
Masahide Takahashi ◽  
Toshinobu Yoko
Keyword(s):  
Solid Solution ◽  
Sol Gel ◽  
Photoelectrochemical Properties ◽  
Solid Solution Film

Sol-gel preparation of Ti 1−x V x O 2 solid solution film electrodes with conspicuous photoresponse in the visible region

1999 ◽  
Vol 339 (1-2) ◽  
pp. 123-128 ◽  
Author(s):  
Gaoling Zhao ◽  
Hiromitsu Kozuka ◽  
Hong Lin ◽  
Toshinobu Yoko
Keyword(s):  
Solid Solution ◽  
Sol Gel ◽  
Visible Region ◽  
Gel Preparation ◽  
Solid Solution Film

Flexible lead-free Na0.5Bi0.5TiO3–EuTiO3 solid solution film capacitors with stable energy storage performances

2020 ◽  
Vol 184 ◽  
pp. 52-56 ◽  
Author(s):  
Fei Guo ◽  
Zhifeng Shi ◽  
Bo Yang ◽  
Yaping Liu ◽  
Shifeng Zhao
Keyword(s):  
Solid Solution ◽  
Energy Storage ◽  
Lead Free ◽  
Solid Solution Film

Piezoelectric Ba and Ti co-doped BiFeO3 textured films: selective growth of solid solutions or nanocomposites

2020 ◽  
Vol 8 (45) ◽  
pp. 16168-16179
Author(s):  
Quentin Micard ◽  
Anna L. Pellegrino ◽  
Raffaella Lo Nigro ◽  
Ausrine Bartasyte ◽  
Guglielmo G. Condorelli ◽  
...  
Keyword(s):  
Solid Solution ◽  
Solid Solutions ◽  
Process Parameters ◽  
Single Phase ◽  
Selective Growth ◽  
Nanocomposite Sample ◽  
Co Doped ◽  
Solid Solution Film

Accurate control of the MOCVD process parameters results selectively and reproducibly in the formation of two different systems: a single-phase solid solution film and a nanocomposite sample formed by nanocolumns embedded in a solid solution film.

A High Schottky Barrier Contact of Metallic Amorphous Si-P on P-Type Si

1986 ◽  
Vol 77 ◽  
Author(s):  
T. Ogino ◽  
M. Sakaue ◽  
Y. Amemiya
Keyword(s):  
Solid Solution ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Conduction Mechanism ◽  
Schottky Contact ◽  
Variable Range Hopping ◽  
Dominant Conduction Mechanism ◽  
Amorphous Si ◽  
P Type ◽  
Solid Solution Film

ABSTRACTA high Schottky barrier contact is formed when amorphous Si-P solid solution film and p-type Si are brought into contact. Amorphous Si-P films were deposited by thermal decomposition of a Si2H6-PH3 mixture at 500°C. It was found that conductivity increases rapidly when PH3/Si2H6, is increased from 0.2 to 2. When PH3/i2H6 = 2, conductivity is 0.15 S/cm, and the dominant conduction mechanism is variable-range hopping. Barrier height of amorphous Si-P/p-type Si Schottky contact is estimated to be 0.8 – 0.85 V. This value exceeds the barrier height formed by any normal metal.

ELECTROCHEMICAL PHOTOCELL USING CdS–ZnSe SOLID SOLUTION FILM ANODE

1978 ◽  
Vol 7 (3) ◽  
pp. 289-292 ◽  
Author(s):  
Masayasu Tsuiki ◽  
Yasusada Ueno ◽  
Tsuyoshi Nakamura ◽  
Hideki Minoura
Keyword(s):  
Solid Solution ◽  
Solid Solution Film
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