Residual strain and threading dislocation density in InGaAs layers grown on Si substrates by metalorganic vapor-phase epitaxy

2001 ◽  
Vol 78 (1) ◽  
pp. 93-95 ◽  
Author(s):  
Y. Takano ◽  
T. Kururi ◽  
K. Kuwahara ◽  
S. Fuke
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Residual Strain ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Threading Dislocation Density

Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces

2010 ◽  
Vol 312 (2) ◽  
pp. 180-184 ◽  
Author(s):  
F. Reiher ◽  
A. Dadgar ◽  
J. Bläsing ◽  
M. Wieneke ◽  
A. Krost
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Index ◽  
Si Substrates

scholarly journals Surface Evolution of GaP Grown on Si Substrates Using Metalorganic Vapor Phase Epitaxy

2010 ◽  
Vol 49 (3) ◽  
pp. 035502 ◽  
Author(s):  
Yasushi Takano ◽  
Tatsuya Takagi ◽  
Yuuki Matsuo ◽  
Shunro Fuke
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Surface Evolution ◽  
Si Substrates

The Influence of Substrate Patterning on Threading Dislocation Density and Residual Stress in GaAs/Si Heteroepitaxial Layers.

1990 ◽  
Vol 198 ◽  
Author(s):  
Hyunchul Sohn ◽  
Eicke R. Weber ◽  
Jay Tu ◽  
Henry P. Lee ◽  
Shy Wang
Keyword(s):  
Residual Stress ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Etch Pits ◽  
Cross Sectional ◽  
Strained Layers ◽  
Si Substrates ◽  
Growth Area ◽  
Threading Dislocation Density ◽  
Influence Of Substrate

ABSTRACTThe growth of GaAs films by MBE on mesa-type patterned Si substrates has been investigated. Mesa widths were varied from 10 µm to 200 µm and were prepared using chemical etching with Si3N4 masks and reactive ion etching. The residual stress in the epitaxial layer was estimated using low temperature (7K) photoluminescence and the defect distribution was studied by cross sectional TEM, dislocation densities were in addition determined by etch pits. The residual stress and the dislocation density decreased monotonically with the reduction of growth area. By the incorporation of strained layers with the reduction of growth area, the etch pit density in GaAs layers on mesas was reduced further.

High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy

2011 ◽  
Vol 40 (8) ◽  
pp. 1790-1794 ◽  
Author(s):  
S. R. Rao ◽  
S. S. Shintri ◽  
J. K. Markunas ◽  
R. N. Jacobs ◽  
I. B. Bhat
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Substrates

Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique

2000 ◽  
Vol 639 ◽  
Author(s):  
H. Miyake ◽  
H. Mizutani ◽  
K. Hiramatsu ◽  
Y. Iyechika ◽  
Y. Honda ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Window Region

ABSTRACTGaN layers with low dislocation density have been fabricated be means of facet-controlled epitaxial lateral overgrowth (FACELO) via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The distribution of the dislocations in FACELO GaN was inspected by observation of InGaN growth pits. For FACELO with {11-20} facets as the first step, the dislocations concentrate only in the window region. For FACELO with {11-22} facets as the first step, the dislocations exist only in the coalescence region. The double FACELO, which was FACELO with {11-20} on FACELO with {11-22}, was demonstrated and dislocation density of less than 105 cm−2 was achieved.

The Reduction of The Defect Density in CdTe Buffer Layers for The Growth of HgCdTe Infrared Photodiodes on Si (211) Substrates

1997 ◽  
Vol 484 ◽  
Author(s):  
H.-Y. Wei ◽  
L. Salamanca-Riba ◽  
N. K. Dhar
Keyword(s):  
Dislocation Density ◽  
Defect Density ◽  
Three Dimensional ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Migration Enhanced Epitaxy ◽  
Threading Dislocation Density ◽  
Order Of Magnitude ◽  
Cdte Buffer

CdTe epilayers were grown by molecular beam epitaxy on As-passivated nominal (211) Si substrates using thin interfacial ZnTe layers. By using thin recrystallized (initially amorphous) ZnTe buffei layers, we utilized migration enhanced epitaxy (MEE) in the ZnTe layer and overcome the tendency toward three dimensional nucleation. The threading dislocation densities in 8–9 tm thick CdTe films deposited on the recrystallized amorphous ZnTe films were in the range of 2 to 5 × 105 cm−2. In addition to the reduction of threading dislocation density, the interface between the ZnTe layers and the Si substrate is much smoother and the microtwin density is an order of magnitude lower than in regular MEE growth. In order to understand the initial nucleation mechanism of the ZnTe on the As precursor Si surface, we also grew ZnTe epilayers on Te precursor treated Si substrates. The growth mode, microtwin density, and threading dislocation density are compared for films grown on Si substrates with different surface precursors and grown by different growth methods.

scholarly journals High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy

2009 ◽  
Vol 48 (1) ◽  
pp. 011102 ◽  
Author(s):  
Yasushi Takano ◽  
Kenta Morizumi ◽  
Satoshi Watanabe ◽  
Hiroyuki Masuda ◽  
Takuya Okamoto ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Si Substrates
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