Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures

2001 ◽  
Vol 89 (2) ◽  
pp. 1232-1250 ◽  
Author(s):  
M. V. Fischetti
Keyword(s):  
Long Range ◽  
Electron Mobility ◽  
Coulomb Interactions ◽  
Effective Electron ◽  
Thin Oxide

Cover Picture: Photoinduced Formation of Wrinkled Microstructures with Long-Range Order in Thin Oxide Films (Adv. Mater. 24/2007)

2007 ◽  
Vol 19 (24) ◽  
pp. NA-NA
Author(s):  
M. Takahashi ◽  
T. Maeda ◽  
K. Uemura ◽  
J. Yao ◽  
Y. Tokuda ◽  
...  
Keyword(s):  
Long Range ◽  
Oxide Films ◽  
Range Order ◽  
Long Range Order ◽  
Thin Oxide Films ◽  
Thin Oxide

scholarly journals Monte Carlo Study of Electronic Transport in Monolayer InSe

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4210 ◽  
Author(s):  
Sanjay Gopalan ◽  
Gautam Gaddemane ◽  
Maarten L. Van de Put ◽  
Massimo V. Fischetti
Keyword(s):  
Monte Carlo ◽  
Long Range ◽  
Electron Mobility ◽  
Short Range ◽  
Field Effect Transistors ◽  
2D Materials ◽  
Matrix Elements ◽  
Electronic Band ◽  
Low Field ◽  
Wide Range

The absence of a band gap in graphene makes it of minor interest for field-effect transistors. Layered metal chalcogenides have shown great potential in device applications thanks to their wide bandgap and high carrier mobility. Interestingly, in the ever-growing library of two-dimensional (2D) materials, monolayer InSe appears as one of the new promising candidates, although still in the initial stage of theoretical studies. Here, we present a theoretical study of this material using density functional theory (DFT) to determine the electronic band structure as well as the phonon spectrum and electron-phonon matrix elements. The electron-phonon scattering rates are obtained using Fermi’s Golden Rule and are used in a full-band Monte Carlo computer program to solve the Boltzmann transport equation (BTE) to evaluate the intrinsic low-field mobility and velocity-field characteristic. The electron-phonon matrix elements, accounting for both long- and short-range interactions, are considered to study the contributions of different scattering mechanisms. Since monolayer InSe is a polar piezoelectric material, scattering with optical phonons is dominated by the long-range interaction with longitudinal optical (LO) phonons while scattering with acoustic phonons is dominated by piezoelectric scattering with the longitudinal (LA) branch at room temperature (T = 300 K) due to a lack of a center of inversion symmetry in monolayer InSe. The low-field electron mobility, calculated considering all electron-phonon interactions, is found to be 110 cm2V−1s−1, whereas values of 188 cm2V−1s−1 and 365 cm2V−1s−1 are obtained considering the long-range and short-range interactions separately. Therefore, the calculated electron mobility of monolayer InSe seems to be competitive with other previously studied 2D materials and the piezoelectric properties of monolayer InSe make it a suitable material for a wide range of applications in next generation nanoelectronics.

Empirical Model for the Effective Electron Mobility in Silicon Nanowires

2014 ◽  
Vol 61 (11) ◽  
pp. 3601-3607 ◽  
Author(s):  
Ralf Granzner ◽  
Vladimir M. Polyakov ◽  
Christian Schippel ◽  
Frank Schwierz
Keyword(s):  
Empirical Model ◽  
Silicon Nanowires ◽  
Electron Mobility ◽  
Effective Electron

Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate Stacks

2002 ◽  
Vol 41 (Part 1, No. 7A) ◽  
pp. 4521-4522 ◽  
Author(s):  
Masahiko Hiratani ◽  
Shin-ich Saito ◽  
Yasuhiro Shimamoto ◽  
Kazuyoshi Torii
Keyword(s):  
Electron Mobility ◽  
Gate Stacks ◽  
Effective Electron
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