Static dielectric permittivity in gapless solid solutions Hg1−xCdxTe

2000 ◽  
Vol 26 (11) ◽  
pp. 853-856
Author(s):  
V. D. Prozorovskiı̆ ◽  
I. Yu. Reshidova ◽  
A. I. Puzynya
Keyword(s):  
Dielectric Permittivity ◽  
Solid Solutions ◽  
Static Dielectric Permittivity

Influence of smectic order on the static dielectric permittivity of liquid crystals

1974 ◽  
Vol 61 (5) ◽  
pp. 1985-1989 ◽  
Author(s):  
W. H. de Jeu ◽  
W. J. A. Goossens ◽  
P. Bordewijk
Keyword(s):  
Liquid Crystals ◽  
Dielectric Permittivity ◽  
Static Dielectric Permittivity

HIGH THERMAL STABILITY OF MICROWAVE DIELECTRIC PROPERTIES OF CaTi1-x(Nb1/2Fe1/2)xO3 CERAMICS

2011 ◽  
Vol 01 (04) ◽  
pp. 417-427 ◽  
Author(s):  
A. D. S. BRUNO COSTA ◽  
M. C. ROMEU ◽  
R. C. S. COSTA ◽  
T. S. M. FERNANDES ◽  
F. W. DE O. AMARANTE ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Dielectric Permittivity ◽  
Solid Solutions ◽  
Microwave Dielectric Properties ◽  
Titanium Content ◽  
Milling Process ◽  
Solid State Method ◽  
Small Shift ◽  
X Ray ◽  
Microwave Dielectric

This paper presents a study of the structure and microwave properties of [Formula: see text] substituted into the Ti 4+ site of calcium titanate ceramics. The structural and dielectric properties of solid solutions in CaTi 1-x( Nb 1/2 Fe 1/2)x O 3, was done. The microwave dielectric properties of solid solutions in CaTi 1-x( Nb 1/2 Fe 1/2)x O 3, (CNFTOX with x = 0.1 to x = 1) is discussed. The modified CaTiO3 (CTO) ceramics were prepared by a new procedure in the solid-state method. A study of the variations of the ball-milling process was done. The calcinations were done at 900°C for 3 and 5 h respectively, and the sintering at 1100°C, for 3 h. The structural property studies of the ceramics were investigated by X-ray diffraction (XRD) and Raman spectroscopy. The X-ray analysis showed that all samples have an orthorhombic structure. The refinement analysis of all samples were also duly performed and discussed. The nine scattering bands centered at 183, 227, 247, 288, 338, 470, 490 and 805 cm-1 were observed. Several peaks presented a small shift as a function of the x value. All Raman spectra in the studied samples showed a small band at 805 cm-1, which is a function of the x value. The dielectric permittivity and loss at microwave frequencies (MW) were investigated. For both calcination treatments (900°C for 3 and 5 h), the dielectric permittivity decreased with a decrease of the titanium content. Dielectric permittivity values in the range of 20 to 80 were obtained. It was also observed that a higher number of balls in the milling process contribute to the increase of the εr values. The CNFTO has an excellent microwave property at x = 0.6, with a temperature coefficient of resonant frequency (τf) near zero (τf = 2.8 ppm/°C).

Critical Behavior of the Dielectric Modulus in Nitrobenzene-Dodecane Mixture

2003 ◽  
Vol 58 (9-10) ◽  
pp. 541-545 ◽  
Author(s):  
P. Malik ◽  
S. J. Rzoska ◽  
A. Drozd-Rzoska ◽  
W. W. Sułkowskia ◽  
J. Jadzynb
Keyword(s):  
Dielectric Properties ◽  
Dielectric Permittivity ◽  
Critical Exponent ◽  
Specific Heat ◽  
Imaginary Part ◽  
Critical Behavior ◽  
Peak Frequency ◽  
Dielectric Modulus ◽  
Static Dielectric Permittivity ◽  
Temperature Dependences

The dielectric properties of a homogenous critical mixture of nitrobenzene-decane were studied in the range 1 Hz< f1 Mz. The temperature dependences of the “static” dielectric permittivity ε’ (1 MHz) and the electric conductivity σ(1 Hz) exhibit pretransitional anomalies which may be associated with the same critical exponent ø = 1−α ≈ 0.88, where α is the critical exponent of the specific heat. The same data were analyzed using the dielectric modulus representation. They show loss curves for the imaginary part of the modulus M ̋( f ). It was found that the temperature evolutions of the peak frequency τ = 1/2π fp and the peak maximum of M ̋ =M ̋( fp) also exhibit critical anomalies. Their forms resemble anomalies obtained for the imaginary part of the dielectric permittivity ε̋( f ), carried out for 40 MHz < f <1 GHz, in an ethanol-dodecane critical mixture [S. J. Rzoska, K. Orzechowski, and A. Drozd-Rzoska, Phys. Rev. E 65, 042501 (2002)]. - PACS: 64.70.Ja, 77.20.+y , 64.60.Fr

scholarly journals Static dielectric permittivity of ionic liquids ultraconfined in carbon nanotubes

Nano Express ◽  
2021 ◽  
Author(s):  
Nadia Ben Cheick Mansour ◽  
Mohammed-Lamine Ouinten ◽  
Armand Soldera ◽  
Anthony Szymczyk ◽  
Aziz Ghoufi
Keyword(s):  
Carbon Nanotubes ◽  
Ionic Liquids ◽  
Dielectric Permittivity ◽  
Static Dielectric Permittivity

scholarly journals RECENT RESULTS ON THERMAL CASIMIR FORCE BETWEEN DIELECTRICS AND RELATED PROBLEMS

2006 ◽  
Vol 21 (25) ◽  
pp. 5007-5042 ◽  
Author(s):  
B. GEYER ◽  
G. L. KLIMCHITSKAYA ◽  
V. M. MOSTEPANENKO
Keyword(s):  
Free Energy ◽  
Low Temperature ◽  
Dielectric Permittivity ◽  
Casimir Force ◽  
Dc Conductivity ◽  
Charge Carrier Density ◽  
Casimir Forces ◽  
Dielectric Plate ◽  
Static Dielectric Permittivity ◽  
Lifshitz Theory

We review recent results obtained in the physics of the thermal Casimir force acting between two dielectrics, dielectric and metal, and between metal and semiconductor. The detailed derivation for the low-temperature behavior of the Casimir free energy, pressure and entropy in the configuration of two real dielectric plates is presented. For dielectrics with finite static dielectric permittivity it is shown that the Nernst heat theorem is satisfied. Hence, the Lifshitz theory of the van der Waals and Casimir forces is demonstrated to be consistent with thermodynamics. The nonzero dc conductivity of dielectric plates is proved to lead to a violation of the Nernst heat theorem and, thus, is not related to the phenomenon of dispersion forces. The low-temperature asymptotics of the Casimir free energy, pressure and entropy are derived also in the configuration of one metal and one dielectric plate. The results are shown to be consistent with thermodynamics if the dielectric plate possesses a finite static dielectric permittivity. If the dc conductivity of a dielectric plate is taken into account this results in the violation of the Nernst heat theorem. We discuss both the experimental and theoretical results related to the Casimir interaction between metal and semiconductor with different charge carrier density. Discussions in the literature on the possible influence of spatial dispersion on the thermal Casimir force are analyzed. In conclusion, the conventional Lifshitz theory taking into account only the frequency dispersion remains the reliable foundation for the interpretation of all present experiments.

scholarly journals Correlation between Electron Mobility and Static Dielectric Permittivity of n-InSb

Open Physics ◽  
2015 ◽  
Vol 13 (1) ◽  
Author(s):  
K. Alfaramawi
Keyword(s):  
Elastic Scattering ◽  
Dielectric Permittivity ◽  
Temperature Dependence ◽  
Electron Mobility ◽  
Donor Concentration ◽  
Scattering Mechanisms ◽  
Static Dielectric Permittivity ◽  
The Difference ◽  
High Donor

AbstractDirect analytical calculations of the static dielectric permittivity-dependent electron mobility due to different elastic scattering mechanisms for n-type InSb were carried out. The calculated static dielectric permittivity increases by increasing of donor concentration. The temperature dependence of the electron mobility from 10 K up to 300 K has been demonstrated. Generally, the electron mobility shows peak behavior in this range of temperatures. The direct correlation between the electron mobility and the static dielectric permittivity at 300 K was investigated. The dependence of the electron mobility on donor concentration was discussed both when the static dielectric permittivity is assumed to be varying and when it is assumed to be a constant. The difference in behavior was noticed particularly at high donor concentrations.

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