Analyses of electroluminescence spectra of silicon junctions in avalanche breakdown using an indirect interband recombination model

2000 ◽  
Vol 77 (20) ◽  
pp. 3182-3184 ◽  
Author(s):  
M. Lahbabi ◽  
A. Ahaitouf ◽  
E. Abarkan ◽  
M. Fliyou ◽  
A. Hoffmann ◽  
...  
Genetics ◽  
1990 ◽  
Vol 126 (3) ◽  
pp. 519-533 ◽  
Author(s):  
F W Stahl ◽  
L C Thomason ◽  
I Siddiqi ◽  
M M Stahl

Abstract When one of two infecting lambda phage types in a replication-blocked cross is chi + and DNA packaging is divorced from the RecBCD-chi interaction, complementary chi-stimulated recombinants are recovered equally in mass lysates only if the chi + parent is in excess in the infecting parental mixture. Otherwise, the chi 0 recombinant is recovered in excess. This observation implies that, along with the chi 0 chromosome, two chi + parent chromosomes are involved in the formation of each chi + recombinant. The trimolecular nature of chi +-stimulated recombination is manifest in recombination between lambda and a plasmid. When lambda recombines with a plasmid via the RecBCD pathway, the resulting chromosome has an enhanced probability of undergoing lambda x lambda recombination in the interval into which the plasmid was incorporated. These two observations support a model in which DNA is degraded by Exo V from cos, the sequence that determines the end of packaged lambda DNA and acts as point of entry for RecBCD enzyme, to chi, the DNA sequence that stimulates the RecBCD enzyme to effect recombination. The model supposes that chi acts by ejecting the RecD subunit from the RecBCD enzyme with two consequences. (1) ExoV activity is blocked leaving a highly recombinagenic, frayed duplex end near chi, and (2) as the enzyme stripped of the RecD subunit travels beyond chi it is competent to catalyze reciprocal recombination.


1966 ◽  
Vol ED-13 (12) ◽  
pp. 874-881 ◽  
Author(s):  
R.A. Kokosa ◽  
R.L. Davies
Keyword(s):  

2017 ◽  
Vol 121 (11) ◽  
pp. 114501 ◽  
Author(s):  
Xiong He ◽  
Zhigang Sun ◽  
Yuyu Pang ◽  
Yuechou Li

2001 ◽  
Vol 680 ◽  
Author(s):  
Konstantin V. Vassilevski ◽  
Alexandr V. Zorenko ◽  
Konstantinos Zekentes

ABSTRACTPulsed X-band (8.2 - 12.4 GHz) IMPATT oscillators have been fabricated and characterized. They utilized 4H-SiC diodes with single drift p+-n-n+ structures and avalanche breakdown voltages of about 290 V. The microwave oscillations appeared at a threshold current of 0.3 A. The maximum measured output power was about 300 mW at input pulse current of 0.35 A and pulse duration of 40 ns.


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