Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach

2000 ◽  
Vol 88 (10) ◽  
pp. 5554-5561 ◽  
Author(s):  
Guobin Liu ◽  
Shun-Lien Chuang ◽  
Seoung-Hwan Park
1998 ◽  
Vol 09 (04) ◽  
pp. 1189-1209
Author(s):  
JIN WANG ◽  
J. B. JEON ◽  
K. W. KIM ◽  
M. A. LITTLEJOHN

Fundamental optical properties of strained wurtzite GaN quantum-well laser are calculated and evaluated near the threshold condition. The formalism is based on a self-consistent methodology that couples an envelope-function Hamiltonian for band structures with photon-carrier rate equations. Details of energy band structure, optical gain, and modulation response are studied comprehensively under the effects of strain-induced piezoelectric fields, bandgap renormalization, and the carrier capture processes. Comparisons between different approximations show that self-consistency is essential to accurately simulate pseudomorphically strained wurtzite GaN quantum-well lasers.


1996 ◽  
Vol 11 (6) ◽  
pp. 897-903 ◽  
Author(s):  
A T Meney ◽  
E P O'Reilly ◽  
A R Adams

2010 ◽  
Vol 107 (1) ◽  
pp. 013107 ◽  
Author(s):  
Shudong Wu ◽  
Yongge Cao ◽  
Stanko Tomić ◽  
Fumitaro Ishikawa

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