scholarly journals Dielectric function of amorphous tantalum oxide from the far infrared to the deep ultraviolet spectral region measured by spectroscopic ellipsometry

2000 ◽  
Vol 88 (9) ◽  
pp. 5166-5174 ◽  
Author(s):  
Eva Franke ◽  
C. L. Trimble ◽  
M. J. DeVries ◽  
J. A. Woollam ◽  
M. Schubert ◽  
...  
Keyword(s):  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Spectral Region ◽  
Tantalum Oxide ◽  
Far Infrared ◽  
Ultraviolet Spectral Region ◽  
Deep Ultraviolet

Lattice and electronic structures of BAlN in the deep ultraviolet spectral region

2021 ◽  
pp. 413188
Author(s):  
Yue Dong ◽  
Wei Lin ◽  
Jinjian Yan ◽  
Changjie Zhou ◽  
Shuping Li ◽  
...  
Keyword(s):  
Electronic Structures ◽  
Spectral Region ◽  
Ultraviolet Spectral Region ◽  
Deep Ultraviolet

Pushing KTiOPO4-like Nonlinear Optical Sulfates into the Deep-Ultraviolet Spectral Region

2021 ◽  
Author(s):  
Yang Zhou ◽  
Xiaomeng Liu ◽  
Zheshuai Lin ◽  
Yanqiang Li ◽  
Qingran Ding ◽  
...  
Keyword(s):  
Spectral Region ◽  
Nonlinear Optical ◽  
Ultraviolet Spectral Region ◽  
Deep Ultraviolet

scholarly journals Photoionization of KCs Molecule: Origin of the Structured Continuum?

Atoms ◽  
2020 ◽  
Vol 8 (2) ◽  
pp. 24 ◽  
Author(s):  
Goran Pichler ◽  
Robert Beuc ◽  
Jahja Kokaj ◽  
David Sarkisyan ◽  
Nimmy Jose ◽  
...  
Keyword(s):  
Excited States ◽  
Ground State ◽  
Spectral Region ◽  
Alternative Explanation ◽  
Molecular State ◽  
Doubly Excited States ◽  
Doubly Excited ◽  
Ultraviolet Spectral Region ◽  
Deep Ultraviolet ◽  
Potential Curves

We report the experimental observation of photoionization bands of the KCs molecule in the deep ultraviolet spectral region between 200 and 420 nm. We discuss the origin of observed photoionization bands as stemming from the absorption from the ground state of the KCs molecule to the excited states of KCs+ molecule for which we used existing potential curves of the KCs+ molecule. An alternative explanation relies on the absorption from the ground state of the KCs molecule to the doubly excited states of the KCs** molecule, situated above the lowest molecular state of KCs+. The relevant potential curves of KCs** are not known yet, but all those KCs** potential curves are certainly autoionizing. However, these two photoionization pathways may interfere resulting in a special interference structured continuum, which is observed as complex bands.

Infrared Ellipsometry Investigation of Hydrogenated Amorphous Silicon

2009 ◽  
Vol 1153 ◽  
Author(s):  
Franco Gaspari ◽  
Anatoli Shkrebtii ◽  
Tom E. Tiwald ◽  
Andrea Fuchser ◽  
Shafiq Muhammad Ahmed ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Spectral Region ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Region Of Interest ◽  
Far Infrared ◽  
Infrared Region ◽  
Infrared Ellipsometry ◽  
Hydrogenated Amorphous

AbstractHydrogenated amorphous silicon (a-Si:H) has been extensively investigated experimentally in the infrared spectral region via techniques such as Fourier Transform Infrared (FTIR) and Raman spectroscopy. Although spectroscopic ellipsometry has been proven to be an important tool for the determination of several parameters of a-Si:H films, including dielectric constant, surface roughness, doping concentration and layer thickness, the spectral range used in these studies has rarely covered the infrared region below 0.6 eV, and never over the complete spectral region of interest (0.04 – 0.3 eV). We have measured for the first time the dielectric function of a-Si:H films grown by the saddle field glow discharge technique by spectroscopic ellipsometry in the energy range from 0.04 eV to 6.5 eV, thus extending the analysis into the far infrared region. The a-Si:H films were deposited on germanium substrates for the ellipsometry studies, and on crystalline silicon substrates for the comparative FTIR analysis. Preparation parameters were chosen to obtain films with different hydrogen content. In this paper, we present the results of the ellipsometry analysis, evaluate different fitting techniques, and compare the results with the corresponding FTIR spectra. The similarities and differences between the spectra are discussed in terms of the a-Si:H properties.

Sign in / Sign up

Export Citation Format

Share Document