Influence of carbon incorporation on dopant surface segregation in molecular-beam epitaxial growth of silicon

H. J. Osten; G. Lippert; J. P. Liu; D. Krüger

doi:10.1063/1.1312258

Influence of carbon incorporation on dopant surface segregation in molecular-beam epitaxial growth of silicon

Applied Physics Letters ◽

10.1063/1.1312258 ◽

2000 ◽

Vol 77 (13) ◽

pp. 2000-2002 ◽

Cited By ~ 12

Author(s):

H. J. Osten ◽

G. Lippert ◽

J. P. Liu ◽

D. Krüger

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Surface Segregation ◽

Carbon Incorporation ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

Applied Physics Letters ◽

10.1063/1.106412 ◽

1991 ◽

Vol 59 (17) ◽

pp. 2103-2105 ◽

Cited By ~ 188

Author(s):

S. Fukatsu ◽

K. Fujita ◽

H. Yaguchi ◽

Y. Shiraki ◽

R. Ito

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Surface Segregation ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Arsenic surface segregation during the molecular-beam epitaxial growth of GaAs embedded in wurtzite GaN

Applied Physics Letters ◽

10.1063/1.1489476 ◽

2002 ◽

Vol 80 (25) ◽

pp. 4768-4770 ◽

Cited By ~ 7

Author(s):

Hyonju Kim ◽

T. G. Andersson

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Surface Segregation ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Optimization of carbon incorporation in GaAs during molecular beam epitaxial growth

Applied Physics A ◽

10.1007/bf01567117 ◽

1996 ◽

Vol 62 (5) ◽

pp. 459-461 ◽

Cited By ~ 3

Author(s):

H. Nörenberg ◽

A. Mazuelas ◽

K. Hagenstein ◽

R. Hey ◽

H. T. Grahn

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Carbon Incorporation ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Optimization of carbon incorporation in GaAs during molecular beam epitaxial growth

Applied Physics A ◽

10.1007/s003390050323 ◽

1996 ◽

Vol 62 (5) ◽

pp. 459-461

Author(s):

H. Nörenberg ◽

A. Mazuelas ◽

K. Hagenstein ◽

R. Hey ◽

H. T. Grahn

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Carbon Incorporation ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Low-Energy Focused Ion Beam Doping during Molecular Beam Epitaxial Growth for the Fabrication of Three-Dimensional Devices: The Effect of Dopant Surface Segregation

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.4477 ◽

1995 ◽

Vol 34 (Part 1, No. 8B) ◽

pp. 4477-4480 ◽

Cited By ~ 2

Author(s):

James H. Thompson ◽

Pier J. Sazio ◽

Harvey E.Beere ◽

Geraint A. C. Jones ◽

David A. Ritchie ◽

...

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Surface Segregation ◽

Focused Ion Beam ◽

Ion Beam ◽

Three Dimensional ◽

Low Energy ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Determination of the surface segregation ratio of P in Si(1 0 0) during solid-source molecular beam epitaxial growth

Semiconductor Science and Technology ◽

10.1088/0268-1242/22/1/s19 ◽

2006 ◽

Vol 22 (1) ◽

pp. S80-S83 ◽

Cited By ~ 7

Author(s):

Phillip E Thompson ◽

Glenn G Jernigan

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Surface Segregation ◽

Segregation Ratio ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Temperature dependence of boron surface segregation in Si molecular beam epitaxial growth on the Si(111) √3 × √3-B surface

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80088-t ◽

1995 ◽

Vol 150 ◽

pp. 989-993 ◽

Cited By ~ 6

Author(s):

Yoshinao Kumagai ◽

Kouichi Ishimoto ◽

Ryosuke Mori ◽

Fumio Hasegawa

Keyword(s):

Temperature Dependence ◽

Epitaxial Growth ◽

Molecular Beam ◽

Surface Segregation ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(111)

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.12.001 ◽

2011 ◽

Vol 323 (1) ◽

pp. 144-149

Author(s):

A. Fissel ◽

J. Krügener ◽

H.J. Osten

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Surface Segregation ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Boron Adsorption

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Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

Journal of Crystal Growth ◽

10.1016/s0022-0248(96)00978-5 ◽

1997 ◽

Vol 175-176 ◽

pp. 883-887 ◽

Cited By ~ 3

Author(s):

J.H. Roslund ◽

O. Zsebők ◽

G. Swenson ◽

T.G. Andersson

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2011.08.032 ◽

2011 ◽

Vol 334 (1) ◽

pp. 113-117 ◽

Cited By ~ 9

Author(s):

Kevin Goodman ◽

Vladimir Protasenko ◽

Jai Verma ◽

Tom Kosel ◽

Grace Xing ◽

...

Keyword(s):

Gallium Nitride ◽

Aluminum Oxide ◽

Epitaxial Growth ◽

Molecular Beam ◽

Atomic Layer ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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