Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN

2000 ◽  
Vol 88 (11) ◽  
pp. 6467-6475 ◽  
Author(s):  
Michele Goano ◽  
Enrico Bellotti ◽  
Enrico Ghillino ◽  
Giovanni Ghione ◽  
Kevin F. Brennan
Keyword(s):  
Band Structure ◽  
Wurtzite Phase ◽  
System Part ◽  
Binary Compounds

Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys AlxGa1−xN, InxGa1−xN, and InxAl1−xN

2000 ◽  
Vol 88 (11) ◽  
pp. 6476-6482 ◽  
Author(s):  
Michele Goano ◽  
Enrico Bellotti ◽  
Enrico Ghillino ◽  
Carlo Garetto ◽  
Giovanni Ghione ◽  
...  
Keyword(s):  
Band Structure ◽  
Ternary Alloys ◽  
Wurtzite Phase ◽  
System Part

scholarly journals Simplex Algorithm for Band Structure Calculation of Noncubic Symmetry Semiconductors: Application to III-nitride Binaries and Alloys

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 63-68 ◽  
Author(s):  
Enrico Ghillino ◽  
Carlo Garetto ◽  
Michele Goano ◽  
Giovanni Ghione ◽  
Enrico Bellotti ◽  
...  
Keyword(s):  
Band Structure ◽  
Simplex Algorithm ◽  
Initial Guess ◽  
Phase Iii ◽  
Band Structure Calculation ◽  
Wurtzite Phase ◽  
Empirical Pseudopotential Method ◽  
Zinc Blende

A set of software tools for the determination of the band structure of zinc-blende, wurtzite, 4H, and 6H semiconductors is presented. A state of the art implementation of the nonlocal empirical pseudopotential method has been coupled with a robust simplex algorithm for the optimization of the adjustable parameters of the model potentials. This computational core has been integrated with an array of Matlab functions, providing interactive functionalities for defining the initial guess of the atomic pseudopotentials, checking the convergence of the optimization process, plotting the resulting band structure, and computing detailed information about any local minimum. The results obtained for wurtzite-phase III-nitrides (ALN, GaN, InN) are presented as a relevant case study.

Exploring Complex Chalcogenides for Thermoelectric Applications

2000 ◽  
Vol 626 ◽  
Author(s):  
Ying C. Wang ◽  
Francis J. DiSalvo
Keyword(s):  
Band Structure ◽  
Physical Properties ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Crystal Symmetry ◽  
Synthesis And Characterization ◽  
Conduction Bands ◽  
Valence Bands ◽  
Binary Compounds

ABSTRACTOur research on ternary / quaternary chalcogenides for thermoelectric applications has lead to the identification of new interesting compounds and better understanding of the chemistry and physical properties of complex chalcogenides. The chemical, geometric, electronic diversity and flexibility has been well demonstrated in BaBiSe3 and Sr4Bi6Se13 type compounds. This presents both a challenge and more opportunity in controlling and optimizing the thermoelectric properties of these complex chalcogenides, compared with elemental and binary compounds. The importance of multivalley band structure in thermoelectric materials is emphasized. Only compounds with high crystal symmetry have the possibility of having a large number of degenerate valleys in the conduction bands or peaks in the valence bands, respectively. However, most of the complex chalcogenides crystallize in low crystal symmetry. An Edisonian method of exploratory synthesis and characterization may be the working approach to find good thermoelectric materials with ZT higher than 4.

scholarly journals Model GW band structure ofInAsandGaAsin the wurtzite phase

2007 ◽  
Vol 75 (24) ◽  
Author(s):  
Z. Zanolli ◽  
F. Fuchs ◽  
J. Furthmüller ◽  
U. von Barth ◽  
F. Bechstedt
Keyword(s):  
Band Structure ◽  
Wurtzite Phase

scholarly journals Полупроводниковые гетероструктуры первого рода с непрямой запрещенной зоной на подложках с ориентацией (110)

2019 ◽  
Vol 53 (5) ◽  
pp. 710
Author(s):  
Д.С. Абрамкин ◽  
Т.С. Шамирзаев
Keyword(s):  
Energy Spectrum ◽  
Band Structure ◽  
Conduction Band ◽  
Strain Distribution ◽  
Spin Dynamics ◽  
Electronic States ◽  
Localized Excitons ◽  
Binary Compounds

AbstractType-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which are difficult to investigate in heterostructures of other types. It is shown that structures with such an energy spectrum can be formed from III–V binary compounds on substrates with the (110) orientation. The effect of the strain distribution and conduction-band structure in quasimomentum space on the energy spectrum of electronic states in the heterostructures is discussed.

Stoichiometry study on the binary compounds in the Mg–Ce system—Part I

2009 ◽  
Vol 475 (1-2) ◽  
pp. 361-367 ◽  
Author(s):  
Xin Zhang ◽  
Dmytro Kevorkov ◽  
Mihriban Pekguleryuz
Keyword(s):  
System Part ◽  
Binary Compounds

Influence of nocturnal bruxism on the stomatognathic system. Part I: a new device for measuring mandibular movements during sleep

2001 ◽  
Vol 28 (10) ◽  
pp. 943-949 ◽  
Author(s):  
Y. Amemori ◽  
S. Yamashita ◽  
M. Ai ◽  
H. Shinoda ◽  
M. Sato ◽  
...  
Keyword(s):  
New Device ◽  
Stomatognathic System ◽  
System Part ◽  
Mandibular Movements
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