Method-of-images formulation of the inverse problem of depth profiling the thermal reflection coefficient in an impulse heated solid

2000 ◽  
Author(s):  
J. Karanicolas
Keyword(s):  
Inverse Problem ◽  
Reflection Coefficient ◽  
Depth Profiling ◽  
Method Of Images

Nondestructive Depth Profiling of a Diffuse Interface

1988 ◽  
Vol 142 ◽  
Author(s):  
Anthony N. Sinclair ◽  
Phineas Dickstein ◽  
Michael A. Graf
Keyword(s):  
Wave Equation ◽  
Reflection Coefficient ◽  
Theoretical Calculations ◽  
Homogeneous Medium ◽  
Depth Profiling ◽  
Diffuse Interface ◽  
One Dimensional ◽  
Frequency Comparison ◽  
The One ◽  
Dimensional Wave

AbstractA numerical solution of the one-dimensional wave equation is used to find the characteristics of wave propagation in a non-homogeneous medium. The solution is used to determine the magnitude and phase of the reflection coefficient at a diffuse interface. The result is found to be strongly dependent on sonic frequency. Comparison is made between theoretical calculations and measurements of the reflection coefficient at a copper-to-nickel diffusion bond.

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

AN INVERSE PROBLEM IN THE DYNAMICAL REATOR THEORY

1982 ◽  
Vol 2 (1) ◽  
pp. 9-16 ◽  
Author(s):  
Dexing Feng ◽  
Guangtian Zhu
Keyword(s):  
Inverse Problem
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