Low-threshold interband cascade lasers with power efficiency exceeding 9%

2000 ◽  
Vol 76 (22) ◽  
pp. 3167-3169 ◽  
Author(s):  
J. D. Bruno ◽  
J. L. Bradshaw ◽  
Rui Q. Yang ◽  
J. T. Pham ◽  
D. E. Wortman
Keyword(s):  
Power Efficiency ◽  
Low Threshold ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

Low threshold interband cascade lasers

2013 ◽  
Author(s):  
S. Höfling ◽  
R. Weih ◽  
A. Bauer ◽  
A. Forchel ◽  
M. Kamp
Keyword(s):  
Low Threshold ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

High-temperature and low-threshold midinfrared interband cascade lasers

2005 ◽  
Vol 87 (15) ◽  
pp. 151109 ◽  
Author(s):  
Rui Q. Yang ◽  
Cory J. Hill ◽  
B. H. Yang
Keyword(s):  
High Temperature ◽  
Low Threshold ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

Low-threshold InAs-based interband cascade lasers operating at high temperatures

2015 ◽  
Vol 106 (25) ◽  
pp. 251102 ◽  
Author(s):  
Lu Li ◽  
Yuchao Jiang ◽  
Hao Ye ◽  
Rui Q. Yang ◽  
Tetsuya D. Mishima ◽  
...  
Keyword(s):  
High Temperatures ◽  
Low Threshold ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

High-Power Mid-IR Interband Cascade Lasers Based on Type-II Heterostructures

1999 ◽  
Vol 607 ◽  
Author(s):  
Rui Q. Yang ◽  
J. D. Bruno ◽  
J. L. Bradshaw ◽  
J. T. Pham ◽  
D. E. Wortman
Keyword(s):  
Quantum Wells ◽  
Semiconductor Lasers ◽  
Power Efficiency ◽  
Active Regions ◽  
Light Sources ◽  
Type Ii ◽  
New Class ◽  
Optical Output ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

AbstractThe interband cascade lasers (IC) represent a new class of mid-IR light sources, which take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we describe recent progress in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.8-4 µm; these semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Also, these lasers were able to operate at temperatures up to 217 K, which is higher than the previous record (182 K) for an IC laser at this wavelength. We observed from several devices at temperatures above 80 K a slope efficiency of ∼800 mW/A per facet, corresponding to a differential external quantum efficiency of /500%. A peak optical output power exceeding 4 W/facet and peak power efficiency of /7% were observed from a device at 80 K. Also, we report the first cw operation of IC lasers.

Interband Cascade Lasers With Low Threshold Powers and High Output Powers

2013 ◽  
Vol 19 (4) ◽  
pp. 1200210-1200210 ◽  
Author(s):  
I. Vurgaftman ◽  
W. W. Bewley ◽  
C. L. Canedy ◽  
Chul Soo Kim ◽  
Mijin Kim ◽  
...  
Keyword(s):  
Low Threshold ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
High Output
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