Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy

2000 ◽  
Vol 76 (22) ◽  
pp. 3224-3226 ◽  
Author(s):  
H. Y. Huang ◽  
C. K. Shu ◽  
W. C. Lin ◽  
C. H. Chuang ◽  
M. C. Lee ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Time Resolved ◽  
Photoluminescence Study ◽  
Time Resolved Photoluminescence

Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy

2007 ◽  
Vol 298 ◽  
pp. 73-75 ◽  
Author(s):  
Y. Endo ◽  
K. Tanioka ◽  
Y. Hijikata ◽  
H. Yaguchi ◽  
S. Yoshida ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Photoluminescence Study

Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant

2001 ◽  
Vol 82 (1-3) ◽  
pp. 137-139 ◽  
Author(s):  
G Pozina ◽  
J.P Bergman ◽  
B Monemar ◽  
S Yamaguchi ◽  
H Amano ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Time Resolved

Micro Raman and micro photoluminescence study of cubic GaN grown on 3C-SiC(001) substrates by metalorganic vapor phase epitaxy

1998 ◽  
Vol 195 (1-4) ◽  
pp. 323-327 ◽  
Author(s):  
Hiroyuki Yaguchi ◽  
Jun Wu ◽  
Baoping Zhang ◽  
Yusaburo Segawa ◽  
Hiroyuki Nagasawa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Photoluminescence Study ◽  
Cubic Gan
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