Magnetic moment of Mn in the ferromagnetic semiconductor (Ga0.98Mn0.02)As

2000 ◽  
Vol 76 (20) ◽  
pp. 2928-2930 ◽  
Author(s):  
H. Ohldag ◽  
V. Solinus ◽  
F. U. Hillebrecht ◽  
J. B. Goedkoop ◽  
M. Finazzi ◽  
...  
Keyword(s):  
Magnetic Moment ◽  
Ferromagnetic Semiconductor

The net magnetic moment of an assemblage of randomly oriented dipoles

Tellus ◽  
1973 ◽  
Vol 25 (3) ◽  
pp. 300-304 ◽  
Author(s):  
L. Kristjansson
Keyword(s):  
Magnetic Moment

Transport and magnetic properties of co-doped ferromagnetic semiconductor (In,Fe,Mn)As

2020 ◽  
Vol 13 (8) ◽  
pp. 083005
Author(s):  
Le Duc Anh ◽  
Taiki Hayakawa ◽  
Kohei Okamoto ◽  
Nguyen Thanh Tu ◽  
Masaaki Tanaka
Keyword(s):  
Magnetic Properties ◽  
Ferromagnetic Semiconductor ◽  
Co Doped

Magnetic Moment of an Electron, its Spin and de Broglie Oscillations.

2019 ◽  
Author(s):  
Volodymyr Bezverkhniy ◽  
Vitaliy Bezverkhniy
Keyword(s):  
Magnetic Moment

Thermally Reversible Nanoparticle Aggregation Explains Magnetic Moment Increase with Temperature

2013 ◽  
Vol 9 (3) ◽  
pp. 381-386 ◽  
Author(s):  
Bashar Issa ◽  
Ihab M. Obaidat ◽  
Shahnaz M. Qadri ◽  
Tahir Abdulrehman ◽  
Yousef Haik
Keyword(s):  
Magnetic Moment ◽  
Nanoparticle Aggregation

Incoherent spin current

2017 ◽  
Author(s):  
K. Ando ◽  
E. Saitoh
Keyword(s):  
Diffusion Equation ◽  
Spin Density ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Current ◽  
Ferromagnetic Semiconductor ◽  
Electrochemical Potential ◽  
Semiconductor Interface ◽  
Interface Resistance ◽  
Inhomogeneous Spin

This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.

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