Large and stable field-emission current from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy

2000 ◽  
Vol 76 (20) ◽  
pp. 2910-2912 ◽  
Author(s):  
Makoto Kasu ◽  
Naoki Kobayashi
Keyword(s):  
Field Emission ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Emission Current ◽  
Field Emission Current ◽  
Si Doped ◽  
Stable Field

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

Stable field-emission from a CeB6 nanoneedle point electron source

Nanoscale ◽  
2021 ◽  
Author(s):  
Shuai Tang ◽  
Jie Tang ◽  
Yimeng Wu ◽  
You-Hu Chen ◽  
Jun Uzuhashi ◽  
...  
Keyword(s):  
Field Emission ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Electron Source ◽  
Emission Current ◽  
Field Emission Current ◽  
Stable Field ◽  
Single Emission

A single CeB6 nanoneedle structure has been fabricated using a focused ion beam (FIB) and it shows an excellent field emission current stability as well as a single emission spot.

scholarly journals Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy

2019 ◽  
Vol 12 (11) ◽  
pp. 111004 ◽  
Author(s):  
Praneeth Ranga ◽  
Ashwin Rishinaramangalam ◽  
Joel Varley ◽  
Arkka Bhattacharyya ◽  
Daniel Feezell ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Si Doped

Impacts of Si-doping on vacancy complex formation and their influences on deep ultraviolet luminescence dynamics in Al x Ga1-x N films and multiple quantum wells grown by metalorganic vapor phase epitaxy

2021 ◽  
Author(s):  
Shigefusa F. Chichibu ◽  
Hideto MIYAKE ◽  
Akira Uedono
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Si Doping ◽  
Deep Ultraviolet ◽  
Si Doped ◽  
Recombination Centers

Abstract To give a clue for increasing emission efficiencies of Al x Ga1-x N-based deep ultraviolet light emitters, the origins and influences on carrier concentration and minority carrier lifetime (τminority), which determines the internal quantum efficiency, of midgap recombination centers in c-plane Si-doped Al0.60Ga0.40N epilayers and Al0.68Ga0.32N quantum wells (QWs) grown by metalorganic vapor phase epitaxy were studied by temporally and spatially resolved luminescence measurements, making a correlation with the results of positron annihilation measurement. For the Al0.60Ga0.40N epilayers, τminority decreased as the concentration of cation vacancies (VIII) increased, indicating that VIII, most probably decorated with nitrogen vacancies (VN), VIII(VN) n , are major nonradiative recombination centers (NRCs). For heavily Si-doped Al0.60Ga0.40N, a generation of electron-compensating complexes (VIII-SiIII) is suggested. For lightly Si-doping regime, τminority of the QW emission was increased by appropriate Si-doping in the wells, which simultaneously increased the terrace width. The importance of wetting conditions is suggested for decreasing the NRC concentration.

Lateral diffusion of sources during selective growth of Si‐doped GaAs layers by metalorganic vapor phase epitaxy

1993 ◽  
Vol 74 (2) ◽  
pp. 1327-1330 ◽  
Author(s):  
Naoki Hara ◽  
Kazushige Shiina ◽  
Tatsuya Ohori ◽  
Kazumi Kasai ◽  
Junji Komeno
Keyword(s):  
Vapor Phase ◽  
Lateral Diffusion ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Si Doped

Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy

1991 ◽  
Vol 115 (1-4) ◽  
pp. 648-651 ◽  
Author(s):  
Hiroshi Murakami ◽  
Tsunemori Asahi ◽  
Hiroshi Amano ◽  
Kazumasa Hiramatsu ◽  
Nobuhiko Sawaki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Si Doped

Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy

2004 ◽  
Vol 43 (6A) ◽  
pp. 3356-3359 ◽  
Author(s):  
Chengxin Wang ◽  
Narihiko Maeda ◽  
Kotaro Tsubaki ◽  
Naoki Kobayashi ◽  
Toshiki Makimoto
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Electron Transport Properties ◽  
Si Doped
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