Electric-pulse-induced reversible resistance change effect in magnetoresistive films

2000 ◽  
Vol 76 (19) ◽  
pp. 2749-2751 ◽  
Author(s):  
S. Q. Liu ◽  
N. J. Wu ◽  
A. Ignatiev
Keyword(s):  
Electric Pulse ◽  
Resistance Change ◽  
Change Effect

Chemical Solution Deposition Growth of La0.7Ca0.3MnO3 Films and their Electric Pulse Induced Resistance Change Effect

2007 ◽  
Vol 280-283 ◽  
pp. 473-476
Author(s):  
Rui Dong ◽  
Qun Wang ◽  
Li Dong Chen ◽  
Xiao Min Li
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Electric Pulse ◽  
Chemical Solution ◽  
Resistance Change ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Change Effect ◽  
Simple Chemical ◽  
Coating Method

A simple chemical solution deposition method was developed for the preparation of La0.7Ca0.3MnO3 (LCMO) thin films. The LCMO thin films were prepared on Si/SiO2/TiO2/Pt substrates by spin-coating method, followed by heat-treatment at 900°C. The fabrication process of the LCMO thin film was investigated by means of TG-DSC, FTIR, XRD, FE-SEM and EPMA. The electric pulse induced reversible resistance switching is observed in the Ag-LCMO-Pt sandwich structure.

Retention behavior of the electric-pulse-induced reversible resistance change effect in Ag–La0.7Ca0.3MnO3–Pt sandwiches

2005 ◽  
Vol 86 (17) ◽  
pp. 172107 ◽  
Author(s):  
R. Dong ◽  
Q. Wang ◽  
L. D. Chen ◽  
D. S. Shang ◽  
T. L. Chen ◽  
...  
Keyword(s):  
Electric Pulse ◽  
Retention Behavior ◽  
Resistance Change ◽  
Change Effect

Resistance Non-volatile Memory – RRAM

2007 ◽  
Vol 997 ◽  
Author(s):  
Alex Ignatiev ◽  
Naijuan Wu ◽  
Xin Chen ◽  
Yibo Nian ◽  
Christina Papagianni ◽  
...  
Keyword(s):  
Low Voltage ◽  
Electric Pulse ◽  
Random Access ◽  
Analytical Techniques ◽  
Resistance Change ◽  
Device Development ◽  
Thin Oxide Film ◽  
Resistance Random Access Memory ◽  
Change Effect ◽  
Non Volatile Memory

AbstractElectric-pulse induced resistance (EPIR) change effect encompasses the reversible change of resistance of a thin oxide film under the application of short, low voltage pulses. The phenomenon is widely observed in complex and binary oxides, and is the basis for development of non-volatile resistance random access memory (RRAM). A variety of analytical techniques have been employed to understand the origin of the resistance change with recent data yielding a model incorporating oxygen ion/vacancy diffusion and pile-up near the interface region of the oxide at the impervious metal interface. Further efforts are still required to fine tune the model and apply it to the optimization of RRAM device development.

Electric-Pulse-Induced Reversible Resistance Change Effect and Its Fatigue Behavior in Manganite Perovskite Films

2005 ◽  
Vol 475-479 ◽  
pp. 3799-3802
Author(s):  
Qun Wang ◽  
Rui Dong ◽  
Li Dong Chen ◽  
Tong Lai Chen ◽  
Xiao Min Li
Keyword(s):  
High Resistance ◽  
Sandwich Structure ◽  
Electric Pulse ◽  
Fatigue Behavior ◽  
High Resistance State ◽  
Resistance Change ◽  
Low Resistance ◽  
Change Effect ◽  
Resistance State ◽  
Pulse Polarity

A novel electric-pulse-induced reversible resistance (EPIR) change effect was observed in Ag/Ln1-xCaxMnO3/Pt (Ln= Pr, La) sandwich structure at room temperature without applied magnetic field. The Ln1-xCaxMnO3 films were grown on Pt/Ti/SiO2/Si substrate. The resistance of the Ag/Ln1-xCaxMnO3/Pt sandwich structure increases and reaches at a saturated high resistance state after applying a certain number of electric-pulse from Pt bottom electrode to Ln1-xCaxMnO3 layer, while it decreases and switches to a saturated low resistance state when the pulse polarity reversed. It is also found that the EPIR effect in the /Ln0.7Ca0.3MnO3/Pt system exhibits “fatigue” behavior, that is, for the high resistance state activated by electric-pulse, along the time after pulsing, the resistance decreases slowly after a certain stable stage; otherwise, the resistance change ratio decreases as the number of the high-low resistance switching circle increases. For the fatigue phenomenon with time, a resistance change with three stages was observed and a simple mechanism of the EPIR was proposed.

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